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## CIP-DATA LIBRARY TECHNISCHE UNIVERSITEIT EINDHOVEN

### Citations

2927 |
Classical Electrodynamics
- Jackson
- 1962
(Show Context)
Citation Context ... c/ √ εd. Jl (Hl) is the l th order spherical Bessel (Hankel) function of the first kind. In the limit ω0R/c → 0, the polarizability as denoted by Eq. (4.17) reduces to the Clausius-Mossotti relation =-=[41, 118]-=- α = R3QD εQD − εh εQD + 2εh . (4.18) with the substitution of R and εd by RQD and εQD, respectively. 4.2.2 Homogeneous quantum dot ensemble To derive the electromagnetic response of a QD ensemble, al... |

831 |
Principles of Optics
- Born, Wolf
- 1964
(Show Context)
Citation Context ...omponents of the electric and magnetic part are continuous across the boundary. Using the boundary conditions, the reflection of the electromagnetic wave can be presented 11 by the Fresnel’s formulae =-=[42, 43, 44]-=- rn = cos θ − (N2 − sin2 θ)1/2 cos θ + (N2 − sin2 θ)1/2 , (2.2) rp = N2 cos θ − (N2 − sin2 θ)1/2 N2 cos θ + (N2 − sin2 θ)1/2 , (2.3) with rn and rp the reflection coefficient for the electromagnetic f... |

676 |
Nonlinear Optics
- Boyd
- 1992
(Show Context)
Citation Context ...ity is shown in Section 2.1 and Chapter 4. The bleaching of the QD ground state transition due to carrier capture within the QD, results directly in a change of the probe pulse reflection, ∆R = ∂R ∂η =-=[86, 127, 131]-=-. We observe that the carrier induced reflection change is linearly proportional to the QD density of states (DOS), ∆R ∼ DOS [Eq. (4.42)]. In addition, as has been discussed in Ref. [17], the TRDR sig... |

260 |
Wave Mechanics Applied to Semiconductor Heterostructures
- Bastard
- 1988
(Show Context)
Citation Context ...Hence, less carriers recombine in the QD ground state. In a simplified picture as depicted in Fig. 2.10, the thermalization of carriers within a QD can be described in terms of coupled rate equations =-=[82, 83]-=-: dn0(t) dt = − n0(t) τ relax0 + τ recom 0 , dn1(t) dt = n0(t) τ relax0 − n1(t) τ relax1 + τ recom 1 , dn2(t) dt = n1(t) τ relax1 − n2(t) τ relax2 + τ recom 2 , (2.27) dn3(t) dt = n2(t) τ relax2 − n3(... |

239 |
Quantum Theory of Radiation
- Heitler
- 1944
(Show Context)
Citation Context ...d emitted by the QD becomes similar to that generated by a dipole of an excited atom in vacuum. Within the dipole approximation, the lifetime of an atom is determined by the spontaneous emission rate =-=[66]-=-. Hence, the spontaneous emission rate of a QD emitter in vacuum is described by Fermi’s Golden Rule, Γvac = 2pi ~2 ∑ Ω |〈f,Ω|Hint|i, 0〉|2δ(ωif − ωΩ), (2.20) and arises from the interaction of the osc... |

228 |
Radiation and Scattering of Waves
- Felsen, Marcuvitz
- 1973
(Show Context)
Citation Context ... the QD. Therefore, the QDs are modelled as spheres with an effective radius RQD. From a mathematical point of view, it is convenient to write the scattered field Es (Hs) in terms of Hertz potentials =-=[113, 114, 115]-=- −→ E s = ∇× (∇×−→Π e) + iωµh∇×−→Π h, (4.7)−→ H s = ∇× (∇×−→Π h)− iωεh∇×−→Π e, (4.8) where −→ Π e ( −→ Π h) denotes the electric (magnetic) Hertz potential. −→ Π e,h are defined as −→ Π e,h(−→r ) = ∫ ... |

199 |
M.: Electrodynamics of Continuous Media
- Landau, Lifshitz
- 1960
(Show Context)
Citation Context ... the anisotropy. Although InAs/GaAs QDs are non-magnetic, it has been reported [177] that a change of the QD geometry or a reduction of the QD circular symmetry may result in a piezomagnetic behavior =-=[178]-=-. This means that, strain and/or composition gradients can induce a magnetization. Hence, the total spin of the carriers are governed by the QD shape [177]. An other mechanism which might play a role ... |

127 |
Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures
- Shah
- 1996
(Show Context)
Citation Context ... excitation pulses is tuned above the GaAs band gap energy. Within the probe energy window which is far below the GaAs band gap, the pump induced changes of the GaAs refractive index can be neglected =-=[51, 52]-=-. Hereby, the refractive index changes are considered to be instantaneous with respect to the carrier occupation dynamics within the QDs. Therefore, the change of the sample dielectric function can be... |

101 |
Electromagnetic Wave propagation, Radiation, and Scattering
- Ishimaru
- 1991
(Show Context)
Citation Context ... the QD. Therefore, the QDs are modelled as spheres with an effective radius RQD. From a mathematical point of view, it is convenient to write the scattered field Es (Hs) in terms of Hertz potentials =-=[113, 114, 115]-=- −→ E s = ∇× (∇×−→Π e) + iωµh∇×−→Π h, (4.7)−→ H s = ∇× (∇×−→Π h)− iωεh∇×−→Π e, (4.8) where −→ Π e ( −→ Π h) denotes the electric (magnetic) Hertz potential. −→ Π e,h are defined as −→ Π e,h(−→r ) = ∫ ... |

67 |
Introduction to optics
- Pedrotti, Pedrotti, et al.
- 2006
(Show Context)
Citation Context ...omponents of the electric and magnetic part are continuous across the boundary. Using the boundary conditions, the reflection of the electromagnetic wave can be presented 11 by the Fresnel’s formulae =-=[42, 43, 44]-=- rn = cos θ − (N2 − sin2 θ)1/2 cos θ + (N2 − sin2 θ)1/2 , (2.2) rp = N2 cos θ − (N2 − sin2 θ)1/2 N2 cos θ + (N2 − sin2 θ)1/2 , (2.3) with rn and rp the reflection coefficient for the electromagnetic f... |

30 |
Superlattices and other heterostructures. Symmetry and optical phenomena (Springer-Verlag
- Ivchenko, Pikus
- 1997
(Show Context)
Citation Context ...k eiφk + Crs(rQD ∑ k eiφk)∗ + |CrQD ∑ k eiφk |2. (2.9) For normal incidence, the reflection coefficient of a thin homogeneous QD layer in the vicinity of its transition energy (~ω0) can be written as =-=[48, 49, 50]-=- rQD(ω) = −iΓ (ω − ω0) + i(Γ + γ) , (2.10) where ~Γ denotes the radiative broadening and ~γ the homogeneous nonradiative broadening of the reflectance spectrum. Rewriting Eq. (2.10) as rQD(ω) = − (Γ +... |

26 |
Semiconductor Physics,
- Seeger
- 1991
(Show Context)
Citation Context ...term, etc. In this model, we will neglect the absorption of the probe light within the GaAs barriers, because the absorption coefficient α of GaAs is small within the energy window of the probe light =-=[45, 46, 47]-=-, and because the GaAs layer thickness d is usually relatively small. Hereby, the amplitude change is primarily determined by the surface of the sample with transmittance ts. In addition, for GaAs the... |

18 |
Single Quantum Dots: Fundamentals, Applications and New Concepts (Berlin: Springer) and reference therein
- Michler
- 2004
(Show Context)
Citation Context ...tical and electro-optical properties of QDs make artificial semiconductor structures with embedded QDs not only interesting for fundamental studies, but also interesting for novel device applications =-=[20, 21]-=-. For instance, QDs are good candidates for the realization of quantum gates for quantum computation [22, 23], or as a single photon source for quantum communication. These devices will in turn be ind... |

14 |
Landolt-Börnstein Numerical Data Functional Relationships
- Hellwege, H
- 1982
(Show Context)
Citation Context ... be governed by these two processes. However, the carrier capture process within the continuum is assumed to be fast [55, 106], < 1 ps, and the carrier diffusion decreases with increasing temperature =-=[107, 108, 109]-=-, which is in contradiction with the temperature dependence of the high carrier density plateau, as is depicted in Fig. 3.6(b). Therefore, we believe that the bleaching of the QD energy transitions is... |

10 |
Self -Assembled InGaAs/GaAs Quantum Dots
- Sugawara
- 1999
(Show Context)
Citation Context ... epitaxy. The semiconductor nanostructures investigated during this research - InAs/GaAs and InAs/InP self-assembled QDs - are grown by the so-called Stranski-Krastanow (SK) [3] growth mode using MBE =-=[4, 5]-=-. The SK-growth mode consists of the deposition of a material layer with lattice constant ai onto a substrate of lattice constant as, with ai 6= as. If the lattice mismatch ∆a = | ai − as | is relativ... |

6 |
Optical Transition, Excitons, and Polaritons in Bulk and Low-Dimensional Semiconductor Structures,
- Andreani
- 1995
(Show Context)
Citation Context ... small [36, 37]. Hence, the QD layers can be approximated by a thin layer with an effective refractive index. In this case we can use the approach of Tassone et al. [35] to derive the QD reflectivity =-=[37, 49, 130]-=-. A full derivation of the QD differential reflectivity is shown in Section 2.1 and Chapter 4. The bleaching of the QD ground state transition due to carrier capture within the QD, results directly in... |

1 |
Optical propeties of solids
- Abelès
- 1972
(Show Context)
Citation Context ...omponents of the electric and magnetic part are continuous across the boundary. Using the boundary conditions, the reflection of the electromagnetic wave can be presented 11 by the Fresnel’s formulae =-=[42, 43, 44]-=- rn = cos θ − (N2 − sin2 θ)1/2 cos θ + (N2 − sin2 θ)1/2 , (2.2) rp = N2 cos θ − (N2 − sin2 θ)1/2 N2 cos θ + (N2 − sin2 θ)1/2 , (2.3) with rn and rp the reflection coefficient for the electromagnetic f... |

1 |
Ultrafast dynamics in highly excited GaAs. Ultrafast physical processes in semiconductors
- Callan, Kim, et al.
- 2001
(Show Context)
Citation Context ... excitation pulses is tuned above the GaAs band gap energy. Within the probe energy window which is far below the GaAs band gap, the pump induced changes of the GaAs refractive index can be neglected =-=[51, 52]-=-. Hereby, the refractive index changes are considered to be instantaneous with respect to the carrier occupation dynamics within the QDs. Therefore, the change of the sample dielectric function can be... |

1 |
III-V Semiconductor compounds, volume 2 of Handbook of electronic materials. IFI/Plenum
- Neuberger
- 1971
(Show Context)
Citation Context ... be governed by these two processes. However, the carrier capture process within the continuum is assumed to be fast [55, 106], < 1 ps, and the carrier diffusion decreases with increasing temperature =-=[107, 108, 109]-=-, which is in contradiction with the temperature dependence of the high carrier density plateau, as is depicted in Fig. 3.6(b). Therefore, we believe that the bleaching of the QD energy transitions is... |

1 | Hot carriers in semiconductor nanostructures - Sarma - 1992 |

1 |
Waves Random
- Grimes
- 1991
(Show Context)
Citation Context ...neous composition, the polarizability is insensitive to the direction such that αxx = αzz = α, thus α = α I with I the unit tensor. For a sphere of radius R, the electric polarizability is written as =-=[116, 117]-=- α = 3i 2 ( v ω )3 v v0 J1(λ0)[2J0(λ)− J2(λ)]− J1(λ)[2J0(λ0)− J2(λ0)] v v0 J1(λ0)[2H0(λ)−H2(λ)]−H1(λ0)[2J0(λ0)− J2(λ0)] , (4.17) with λ = ωR v , λ0 = ω0R v0 , and v = c/ √ εh and v0 = c/ √ εd. Jl (Hl)... |

1 |
Acoustic fields and waves in solids, volume 1. Wiley-Interscience
- Auld
- 1973
(Show Context)
Citation Context ...QT acoustic phonons [151, 158] in GaAs along the [311] crystal direction, with velocities of 5.1×105 cm/s and 2.91×105 cm/s, respectively, as is derived by solving the Christoffel equation Eq. (C.10) =-=[151, 159]-=-, k2Γ−→v = ρω2−→v , k2 α δ δ β ζ ζ γ vxvy vz = ρω2 vxvy vz , (6.2) with the elements α, β, . . . etc., given by Eq. (C.11). A detailed derivation of the phase velocities is presented ... |

1 | Optical and acoustic phonons in InGaAs - Adachi - 1993 |