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The gain in integrability and speed is the main reason
by
A. Godoy
,
J. A. Lopez-villanueva
,
J. A. Jimenez-tejada
,
A. Palma
,
F. Gamiz
BibTeX
@MISC{Godoy_thegain,
author = {A. Godoy and J. A. Lopez-villanueva and J. A. Jimenez-tejada and A. Palma and F. Gamiz},
title = {The gain in integrability and speed is the main reason},
year = {}
}
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Abstract
A new approach to calculate the subthreshold swing of short channel bulk and silicon-on-insulator metal oxide semiconductor ®eld e€ect transistors is presented. The procedure utilizes a channel-potential expression appropriate for submicron dimensions. The ®nal result is similar to that used for long channels except for a factor k which represents
