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## Insightful Closed-Form Expressions for Small-Signal S-Parameters of

### Citations

274 | Foundations for Microwave Engineering - Collin - 1992 |

57 |
Microwave Circuit Design Using Linear and Nonlinear Techniques.
- Vendelin
- 1990
(Show Context)
Citation Context ... that sparameters must also be temperature dependent. Forward transmission gain (S21) is well known to be a strong function of collector current in BJTs which itself is quite sensitive to temperature =-=[1,2]-=-. It has also been shown that not only all four s-parameters (S11, S21, S12, and S22) are bias sensitive, but their magnitudes and phases also vary due to change in temperature even when constant coll... |

42 |
Semiconductor Device Modeling with
- Massobrio, Antognetti
- 1993
(Show Context)
Citation Context ...s. in the previous section. The numerical values for the small- signal model parameters have been computed using HSPICE by linearizing the static and large signal model parameters for the transistors =-=[15, 16]-=-. The resistances rb, re, and rc, have been assumed constant for this work and their values have been taken from the model parameters for the transistors used. On-wafer s-parameter measurements were d... |

34 | Modern Transmission Line Theory and Applications - Dworsky - 1979 |

25 |
Microwave Transistor Amplifiers
- Gonzalez
- 1997
(Show Context)
Citation Context ...evice model parameters. As regards to the relationship between s-parameters and device model parameters, the only references found are in the context of feedback effects on broadband amplifier design =-=[4,5]-=-. The prior work was neither focused on closed-form expressions for s-parameters nor intended to develop insightful relationships between sparameters of a BJT and its high-frequency equivalent circuit... |

12 | Design of Amplifiers and Oscillators by the S-Parameter Method - Vendelin - 1982 |

9 |
A new straightforward calibration and correction procedure for on wafer high frequency s-parameter measurements
- Wijnen
- 1987
(Show Context)
Citation Context ...work analyzer was duly calibrated using TRL technique and the full two-port error model implemented in HP8510C was employed. The measurement data was corrected using y-parameter deembedding technique =-=[18]-=-. The comparison of measured and calculated smallsignal s-parameters for an npn transistor is given in Fig.4. As shown, the small- signal s-parameters obtained from on-wafer measurements and calculate... |

3 |
Release 4
- MAPLE
- 1996
(Show Context)
Citation Context ...n of small-signal sparameters in terms of small-signal high-frequency equivalent circuit model parameters is shown in Fig. 3. The conversion and simplification of the expressions was done using MAPLE =-=[14]-=- and hand analysis together. The resulting small-signal s-parameters in terms of equivalent circuit model parameters are as follows: S S S 2 −CZo +(( rb −rc) C −rì ( Bro −rð )) Zo + D+ E + F = Denom 2... |

1 |
Thermal Effects on RF/Microwave Circuit and
- Nadeem
- 1998
(Show Context)
Citation Context ...t not only all four s-parameters (S11, S21, S12, and S22) are bias sensitive, but their magnitudes and phases also vary due to change in temperature even when constant collector current is maintained =-=[3]-=-. This implies that besides bias current there are other factors as well that cause variations in s-parameters. S-parameters of an active or a passive device are defined and also measured as the ratio... |

1 |
Compund Feedback for Bipolar Circuits,” Unpublished Notes
- Eisenstadt
- 1995
(Show Context)
Citation Context ...evice model parameters. As regards to the relationship between s-parameters and device model parameters, the only references found are in the context of feedback effects on broadband amplifier design =-=[4,5]-=-. The prior work was neither focused on closed-form expressions for s-parameters nor intended to develop insightful relationships between sparameters of a BJT and its high-frequency equivalent circuit... |

1 |
State Physical Electronics, Edition
- Zeil, Solid
- 1976
(Show Context)
Citation Context ... from DC to higher frequencies, so long as the base transit time (τB) is much smaller than the signal time period (T) [6]. At higher frequencies, the small-signal transconductance (gm) become complex =-=[7]-=-. However, during this work a real value for gm has been used. This was considered sufficient because for all the active devices used, the frequency fα (the frequency up to which gm is practically equ... |

1 |
Linear Vacuum-Tube and Transistor Circuits
- Oakes
- 1961
(Show Context)
Citation Context ...rix analysis of the high-frequency equivalent circuit shown in Fig. 1 is essential. To express s-parameters in terms of device model parameters, the indefinite admittance matrix approach was employed =-=[8]-=-. To proceed, an equivalent circuit in terms of admittances is drawn along with the current sources connected to each node as shown in Fig. 2. A system of nodal equations for the voltages between node... |

1 | Ramesh Garg and Rakesh Chadha, Computer-Aided Design of Microwave Circuits, Artech House - Gupta - 1981 |