Abstract

ber of harmonics.1 It also provides a high effi-ciency and has a simple circuit construction.9 Though many papers have been published on class-F PAs, a detailed design procedure is still needed to aid in practical construction. The purpose of this article is to present a design procedure for a class-F PA with an example given at 900 MHz. DESIGN PARAMETERS AND PROCEDURE In low bias voltage operation, the knee voltage in the active device will affect the PAE. Therefore, the knee voltage is one of the design considerations and leads to the selec-tion of a pseudomorphic high electron mobili-ty transistor (PHEMT), since the knee voltage of HEMTs is lower than that of GaAs