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An Improved Theoretical Model to Explain Electronic and Optical Properties of p-Type GaAs/AlGaAs Superlattices for Multi-Wavelength Normal Incidence Photodetectors
BibTeX
@MISC{Kim_animproved,
author = {Byoung-Whi Kim and Eun-Chang Choi and Kwon Chul Park and Seok-Youl Kang and Gaas/algaas Superlattices For Multi-wavelength},
title = {An Improved Theoretical Model to Explain Electronic and Optical Properties of p-Type GaAs/AlGaAs Superlattices for Multi-Wavelength Normal Incidence Photodetectors},
year = {}
}
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Abstract
We extend our previous theoretical analysis of electronic and optical properties of ptype quantum well structures based on the two heavy- and light-hole system to include all the three valence bands. These theories are then used to clarify the origin of the normal incidence absorption and photocurrent at photon wavelengths of 2 - 3 #m, which was observed in addition to the absorption around 8 #mby a recent experimental investigation with heavily doped p-type GaAs/AlGaAs multi-quantum well (MQW) structures. In the theoretical analysis, the Hartree and exchange-correlation many-body interactions are taken into account within one-particle local density approximation, and it is shown that normal incidence absorption occurs in two wavelength regions over the transition energy range higher than barrier height for p-type GaAs/AlGaAs superlattices with well doping of 2# 10 19 cm #3 ; one region has broad absorption peaks with coefficients of about 5000 cm #1 around 8 #m, and the other has t...
Keyphrases
optical property p-type gaas algaas superlattices improved theoretical model multi-wavelength normal incidence photodetectors normal incidence absorption photon wavelength exchange-correlation many-body interaction broad absorption peak one-particle local density approximation ptype quantum previous theoretical analysis p-type gaas algaas multi-quantum well wavelength region light-hole system valence band recent experimental investigation transition energy range theoretical analysis
