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ANOMALOUS BEHAVIOR OF THE HALL EFFECT IN III-V HEYEROSTRUCTURES (2000)
by
Z Dziuba
,
M Górska
,
J Marczewskib
,
T Przesławskib
,
K Rεgińskib°'
BibTeX
@MISC{Dziuba00anomalousbehavior,
author = {Z Dziuba and M Górska and J Marczewskib and T Przesławskib and K Rεgińskib°'},
title = {ANOMALOUS BEHAVIOR OF THE HALL EFFECT IN III-V HEYEROSTRUCTURES},
year = {2000}
}
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Abstract
The Hall effect and magnetoresistance were measured in the InAs/GaAs heterostructure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall coefficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T was explained as due to an extraordinary Hall effect caused by skew scattering on dislocations.
