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Foundation of rf CMOS and SiGe BiCMOS Technologies (2003)
| Citations: | 4 - 0 self |
BibTeX
@MISC{Dunn03foundationof,
author = {J. S. Dunn and D. C. Ahlgren and D. D. Coolbaugh and N. B. Feilchenfeld and G. Freeman D. R. Greenberg and R. A. Groves and F. J. Guarn and Y. Hammad and A. J. Joseph and L. D. Lanzerotti and S. A. St.Onge and B. A. Orner and J.-S. Rieh and K. and Sige Bicmos},
title = {Foundation of rf CMOS and SiGe BiCMOS Technologies},
year = {2003}
}
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Abstract
This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development. 1.
Keyphrases
rf cmos sige bicmos technology detailed description device selection passive device mixed-signal ic development mixed-signal system-on-a-chip integration methodology ibm sige bicmos advanced cmos technology cmos technology device characteristic high-performance sige heterojunction bipolar transistor process development
