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... that are integrated in a test environment that emulates typical cases, for example a fanout-4 (FO4) load [3, 4].sStandard cell design is an extensively applied methodologysfor digital circuit design =-=[5]-=-. In order to enable design analysissbefore fabrication, each standard cell has to be characterizedsin terms of delay, power consumption, and area. This characterization can be done using previously f...

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...flow. All applied technologies are based onspredictive and freely available models.s1) Bulk CMOSsThe applied Bulk CMOS technology is based on the predictive technology models PTM for high performance =-=[17]-=-,swhich is based on the BSIM4 spice model [18]. The featuressizes 32 nm and 22 nm, named PTM32 and PTM22, have beensimplemented. Table 1 lists the most important technologysparameters, which are chann...

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... orsin the prev ed flow. For the maximum (Pdyn), and t -product (PD ower consum e comparison M32 technol son of the PD R EACH FEATURE FET32snmsnms10s0 Vsroduct (PDP) o work are a m 40, c499, c5 suite =-=[21]-=-, an TC99 bench he performansis the possi mance of diff ctual designs. erent kind ofsVerilogA.sious sectionseach benchsdelay (tdelay) he leakage p P), the produ ption, was c , all resultssogy.sP value...

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..., such as delay, power dissipation, and area. Usually, this analysis is done on selected cells that are integrated in a test environment that emulates typical cases, for example a fanout-4 (FO4) load =-=[3, 4]-=-.sStandard cell design is an extensively applied methodologysfor digital circuit design [5]. In order to enable design analysissbefore fabrication, each standard cell has to be characterizedsin terms ...

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...bon nanotubesbody provides a precise electrostatic control of its conductance. This enables the CNTFET to have extraordinary improvements of the intrinsic delay compared to commonsMOSFET technologies =-=[12]-=-.sFig. 2 depicts the basic CNTFET structure. Similar to existing MOSFET technology, CNTFET features drain andssource semiconductor regions as well as a gate electrode.sDrain and source are connected v...

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...B T com c755 quen suite V. T the i A. T A to co tech ther nolo been desi dyna (Plea max lated norm F OGIESsaluesh)-1s/µmsFig. 4 relate enchmark D he applied b binational de 2), taken fro tial designss=-=[22]-=-.sRESULTS his section p mplementedsechnology Csremarkablesmpare with r nologies base , the flow per gy models, li All technologsanalyzed b gn have been mic powersk). Further, th imum delay a . In orde...

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..., such as delay, power dissipation, and area. Usually, this analysis is done on selected cells that are integrated in a test environment that emulates typical cases, for example a fanout-4 (FO4) load =-=[3, 4]-=-.sStandard cell design is an extensively applied methodologysfor digital circuit design [5]. In order to enable design analysissbefore fabrication, each standard cell has to be characterizedsin terms ...

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... like transistor channel length, dopingsprofiles, or thickness of gate oxide. These parameters are untouchable by the circuit designers, and thus, are the same in allsdesigns based on that technology =-=[1]-=-. Usually, the choice ofsthe technology parameter values is mainly driven by manufacturing constraints, such as limitations of the lithography process or characteristics of applied materials. Another ...

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...nt. Hence, this work applies the semi-empirical Stanford University Virtual Source CNFET VerilogA model thatsdescribes the current-voltage and charge-voltage characteristics of a short-channel CNTFET =-=[20]-=-. This model proved toshave good accuracy as it considers gate resistance and capacitances, Schottky Barrier Effects, as well as parasitics on thesCarbon nanotubes, source and drain [20]. The model is...

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...es from intended applications of the technology. For example, a common option of current technologies oriented forsconsumer applications are devices with high-performance orslow-standby-power profile =-=[2]-=-. Thereby, devices differ in itssthreshold voltage and/or gate oxide thickness.sThe selection of the parameter values based on intendedsapplication requires the analysis of how each parameter impacts ...

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...s or besbased on precise transistor level simulation. Hence, it alsospossible to characterize designs that use predictive technologies, as for example done by Qing et al. for a 5 nm FinFETstechnology =-=[6]-=- and Bobba et al. for a Carbon nanotube technology [7]. However, to the best of our knowledge, there is nosresearch published on how the results of such analysis can besfeed-back to the process of tec...

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...Hence, it alsospossible to characterize designs that use predictive technologies, as for example done by Qing et al. for a 5 nm FinFETstechnology [6] and Bobba et al. for a Carbon nanotube technology =-=[7]-=-. However, to the best of our knowledge, there is nosresearch published on how the results of such analysis can besfeed-back to the process of technology parameter selection.sThe contribution of this ...

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...ptibility to short-channel effects [10].sC. Carbon nanotubes TransitorsThe Carbon nanotubes field-effect transistor (CNTFET) issone of the most promising potential successors of thesMOSFET transistor =-=[11]-=-. Its base component, the Carbonsnanotube (CNT), is a nanocylinder composed by a sheet ofsCarbon atoms that possesses excellent electrical, thermal, andsmechanical properties. Further, the ultrathin C...

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...controlled by an electrical field applied over gate and substrate.sA significant advantage compared to other novel nanotechnologies is its compatibility to the conventional MOSFETsfabrication process =-=[13]-=-. That is, source, drain, and gate regionscan built by existing manufacturing processes, while only thesCNT region requires a Carbon nanotube grow process.sFurther, the CNTFET technology offers p-type...

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... introduces the technologies applied in thisswork.sA. Planar BulksMOSFETsThe classical planar bulk Metal Oxide SemiconductorsField-Effect Transistor (MOSFET) is still a widely appliedstransistor type =-=[8]-=-. The n-channel version of a MOSFET isscomposed of two n-type semiconductor regions, called sourcesand drain, which are separated by a region of p-type semiconductor, called substrate. In case of the ...

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...eld applied over gate and source. Hence, the MOSFET actssas a switch controlled by its gate voltage.sB. FinFETsThe FinFET technology is the current state-of-the-art technology for integrated circuits =-=[9]-=-. FinFET are part of the groupsof multi-gate field-effect transistors, which integrate moresthan one gate into a single device [4]. In case of the FinFET, asthin silicon body, called fin and acting as...

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...e to theswrapped gate structure, the electrical control over the channelsis improved leading to high on-to-off current ratio, lower leakage currents, and lower susceptibility to short-channel effects =-=[10]-=-.sC. Carbon nanotubes TransitorsThe Carbon nanotubes field-effect transistor (CNTFET) issone of the most promising potential successors of thesMOSFET transistor [11]. Its base component, the Carbonsna...