A comparative study of (2006)

by S Jafar, Y H Kim, V Narayanan, C Cabral, V Paruchuri, B Doris, J Stathis, A Callegari, M Chudzik
Venue:NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates,” Proceedings of the IEEE Symposium on VLSI Technology