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... not as cache or memory [12]. Phase change memory (PCM) is only 2×-4× slower than DRAM and has 4× more density than DRAM, however, its write endurance value is much smaller than that of SRAM and DRAM =-=[13]-=-. For spin torque transfer RAM (STT-RAM), although the write-endurance has been estimated to be 1015, the best endurance test result so far shows a write endurance of only 4 × 1012 writes [14]. Also, ...

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... scalability compared to the SRAM. At the same time, NVMs are not strictly superior to SRAM on all design parameters. Specifically, PCM has very high write latency/energy and very low write endurance =-=[3]-=-. To address these issues, we propose a way-based SRAM-PCM hybrid cache design where 2 out of 8 ways are designed using SRAM and the remaining ways are designed using PCM. Our hybrid cache design aims...