called "Long Short Term Memory" (LSTM). LSTM can learn to bridge minimal time lags in excess of 1000 time steps by enforcing constant error flow through internal states of special units. Multiplicative gate units learn to open and close access to constant error flow. LSTM's update

Most recent works on soft errors only address circuit reliability under single gate errors caused by SEUs. In this paper, we compare the probabilities of single and multiple errors. We formulate a criterion based on gate error probabilities for considering multiple gate errors in circuit

Abstract—The body thickness dependence of impact ionization for a multiple-gate fin field-effect transistor (FinFET) is presented. It is found that the nonlocal effect and series resistance are distinct features of reduced impact ionization in the multiple-gate FinFET, and these effects become more

This is a review paper on the topic of multiple gate field effect transistors: MuGFETs, or FinFETs, as they are called. First, the motivation behind multiple gate FETs is presented. This is followed by looking at the evolution of FinFET technologies; the main flavors (variants) of Multigate FETs

In this paper we consider the problem of constructing a small arithmetic circuit for a polynomial for which we have oracle access. Our focus is on n-variate polynomials, over a finite field F, that have depth-3 arithmetic circuits with two multiplication gates of degree d. We obtain the following

Reliability and validity data on s procedure for identification of students "at risk " for exhibiting behavior disorders are presented. The Systematic Screening for Behavior Disorders instrument relies upon teacher judgment and normative criteria in three interrelated stages that cross validate the results of each other. Stage 1 has teachers rank students on both "externalizing " and "internalizing " behavioral dimensions. Stage 2 involves teacher completed rating measures on adaptive and maladaptive behavior while Stage 3 includes observation in classroom and free play settings which are used to confirm other measures. De,a are presented on a districtwide trial involving 158 classroom teachers in 16 schools. Observation data on 301 elementary grade students confirm the accuracy of this cost effective procedure in identifying children exhibiting behavior disorders. (Author) Reproductions supplied by EDRS are the best that can be made from the original document.

Abstract—This paper provides a comparative study of car-rier transport characteristics for multiple-gate silicon-on-insulator MOSFETs with and without the nonoverlapped source/drain structure. For the overlapped devices, we observed Boltzmann law in subthreshold characteristics and phonon

Substrate bias effect linked to parasitic series resistance in multiple-gate SOI MOSFETs

security with n = 4t + 1, where t out of n parties can be under the influence of a Byzantine (active) adversary At having unbounded computing power. Our protocol communicates O(n 2 log |F|) bits per multiplication gate and involves a negligible error probability of 2 −Ω(κ) , where κ is the error parameter

Abstract—This letter provides an assessment of single-electron effects in ultrashort multiple-gate silicon-on-insulator (SOI) MOS-FETs with 1.6-nm gate oxide. Coulomb blockade oscillations have been observed at room temperature for gate bias as low as 0.2 V. The charging energy, which is about 17