technology at the cause of increasing the cost and system complexity. Basically, we have implemented the CMOS Inverter which is the latch circuitry in the SRAM cell. We have simulated a 3D integrated CMOS Inverter in 40nm process technology.

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). For CMOS circuits most power is dissipated as dynamic power for charging and discharging node capacitances. This is why many promising results in lowpower design are obtained by minimizing the number of transitions inside the CMOS circuit. While it is generally accepted that because of the large

was systematically investigated. Ambipolar TFTs which possesses balanced electron and hole field-effect mobilities were achieved. Complementary metal oxide semiconductor (CMOS)- like inverters using the SnO dual operation transistors were also demonstrated with a gain up to 30. These results also demonstrate that, a

Inverter is truly the nucleus of electronics industry. It is the main building block of everyday appliances i.e. microwaves, power tools, battery chargers, air conditioners and computers etc. In this paper, CMOS technology has been chosen to study the transient and dc characteristics of an inverter

Abstract ~ In this paper we derive analytical & physical based expressions to characterize the static behavior of the submicron CMOS inverter. The model expressions include formulae to estimate the logic threshold voltage and noise margins of submicron CMOS inverters. These expressions have

A method for modeling complex CMOS gates by the reduction of each gate to an effective equivalent inverter is introduced. The conducting and parasitic behavior of parallel and serially connected transistors is accurately analyzed and an equivalent transistor is extracted for each case, taking

This communication presents the evidence of a degradation effect causing important reductions in the delay of a CMOS inverter when consecutive input transition are close in time. Complete understanding of the effect is demonstrated, providing a quantifying model. Fully characterization as a

is of secondary importance. One way to achieve this goal is by running the CMOS inverter circuit in sub threshold mode.[2,3]The incentive of operating the circuit in sub threshold mode is to be able to exploit the sub threshold leakage current as the operating current for the circuit. The sub threshold current

In this paper, a new D-latch topology has been implemented in MOS Current Mode Logic (MCML) that works on lower supply voltage than the D-latch topology already implemented in MCML. The already implemented D-latch topology is called Traditional D-Latch Topology and the new D-latch topology that works on lower voltage is called low-voltage D-Latch Topology. Power consumed by MCML circuit is directly related to the supply voltage given to the circuit. For a particular amount of current drawn from the power supply, if supply voltage increases then power consumption of the circuit also increases and vice versa. Thus, the low-voltage D-latch topology consumes lesser power than the traditional D-latch topology.