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Table 2 - Manual Cell Layouts
"... In PAGE 5: ... However, it is possible that tools such as Cadabra from Synopsys [30] could be used for this step in the future. The fifteen cells required for the design are listed in Table2 . All the cells are relatively small in size ranging from an inverter with two transistors to a group of SRAM bits requiring eighty transistors.... ..."
Table I City Area Cell Layout with 100 cells
Table 1: Tactical vs. generic standard cell layouts
"... In PAGE 3: ... Figure 4: Cell area distribution in island-style eFPGA Figure 5: Area savings due to tactical standard cells Custom layouts were created for 3, 4, and 5-input LUTs, SRAMs, and multiplexers. Table1 compares these with their generic standard cell equivalents (LUT area includes SRAMs). The results show area savings of 2.... ..."
TABLE I THE BENCHMARK CIRCUITS FOR THE MACRO-CELL LAYOUT GENERATION PROBLEM
TABLE X COMPARISON OF TWO MEMORY CELL LAYOUTS Characteristic Cell #1 Cell #2
Table 6 shows the densities directly evaluated on standard-cell layout (processes ECPD07 and
"... In PAGE 7: ...TR# Density CELL TR# Density INV 2 3008 an02d0 6 46875 NAND2 4 5906 an13d1 10 44643 AOI22 8 11363 an04d2 12 53571 AND4 10 12449 aor21d4 14 48611 DFF 29 14441 nr02d4 16 71429 aoi222d2 18 56250 lachq1 20 48077 aoi2222d2 24 57692 dfnrb1 26 42763 labhb1 28 51471 xr03d4 28 58333 dfcrn2 30 49342 denrq1 34 53125 jkbrb2 46 53241 sdbrb2 52 56034 Table6 - Standard-cell densities, process ECPD07 and ECAT05 Table 7 shows the densities obtained for circuits generated with standard-cells, using place and route tools. The routing area for these circuits corresponds to 56% of the total area, close to the predicted values.... ..."
Table1: Critical charge from SPICE simulations for hits on nodes A and B. The transition refers to the output of the cell, and SA stands for Sensitive Area as measured from the cell layout.
1999
"... In PAGE 4: ...The critical charge computed from the SPICE simulation is reported in Table1 , which also indicates the sensitive area SA (or cross-section) of the cell estimated from the layout for hits in both A and B and for 0- gt;1 and 1- gt;0 transitions. In the estimate from the layout, the sensitive area has been taken as the drain diffusion area of the inverter transistors and the source and drain diffusion areas of the switches.... ..."
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Table 2. Layout modification Results for Standard-Cell Blocks.
"... In PAGE 6: ... 5.2 Phase Conflict Correction Results Table2 reports the results of using the proposed layout mod- ification scheme for correcting the phase conflicts chosen by the detection step on the same layouts. Column Area reports the area of the designs in square microns.... ..."
TABLE II LAYOUT MODIFICATION RESULTS FOR STANDARD-CELL BLOCKS.
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