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Abstract: this paper both contributions will be treated on the same theoretical basis. Earlier theoretical approaches to BGN were mostly restricted to the T = 0-limit. Mahan [12] performed a Hartree-Fock variational calculation of the ground state energy of the electrondonor system in n-type silicon valid up to concentrations of 10 20 cm \Gamma3 neglecting band tailing and assuming that the donors are distributed on a regular fcc sublattice. The hole and electron correlation energies were taken into... (Update)
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BibTeX entry: (Update)
A. Schenk, "Finite-Temperature Full-Random Phase Approximation Model of Band Gap Narrowing for Silicon Device Simulation," J. Appl. Phys., vol. 84, no. 7, pp. 2296--2301, 1998. 24 http://citeseer.ist.psu.edu/schenk98finitetemperature.html More
@misc{ schenk98finitetemperature,
author = "A. Schenk",
title = "Finite-Temperature Full-Random Phase Approximation Model of Band Gap Narrowing
for Silicon Device Simulation",
text = "A. Schenk, Finite-Temperature Full-Random Phase Approximation Model of
Band Gap Narrowing for Silicon Device Simulation, J. Appl. Phys., vol. 84,
no. 7, pp. 2296--2301, 1998. 24",
year = "1998",
url = "citeseer.ist.psu.edu/schenk98finitetemperature.html" }
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