(Enter summary)
Abstract: We review progress on a project to evaluate prospective
operations in a semiconductor wafer fab that employs nextgeneration,
proximity X-ray lithography to pattern the
critical dimensions of computer chips. A simulation model
is developed that captures the processing of wafers through
an X-ray lithography cell using a synchrotron as the source
of exposure radiation. The model incorporates the best
current information on unit-cell design and processing
times and implements a range of events that ... (Update)
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BibTeX entry: (Update)
@inproceedings{ white99operational,
author = "K. Preston White and Walter J. Trybula",
title = "Operational simulation of an x-ray lithography cell: comparison of 200mm and 300mm wafers",
booktitle = "Winter Simulation Conference",
pages = "865-874",
year = "1999",
url = "citeseer.ist.psu.edu/405565.html" }
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