A. A. Abidi, "High-frequency noise measurements on FET's with small dimensions," IEEE Trans. Electron Devices, vol. 33, p. 1801, Nov. 1986.  Home/Search   Document Not in Database   Summary   Related Articles   Check

....[1] and mixers [2] RF designs are increasingly taking advantage of CMOS technology. Several studies have claimed that the fundamental noise performance of CMOS amplifiers would be limited by the noise sources of thermal origin, such as the excessive drain noise in the saturation region [3] [4] and the induced gate noise [1] 5] at radio frequencies. While complete broad band characterization and accurate modeling of the MOSFET noise are indispensable for future RF circuit designs, the noise behavior in short channel MOSFETs is not well understood. Simulation of MOSFET noise can play ....

....bias is zero [18] Also for long channel MOSFETs in saturation, and are reportedly 4 3 and [5] As shown in Fig. 7(a) and (b) the long channel simulation results exhibit good agreement with the classical values, regardless of the transport model used in device simulation. Jindal [3] and Abidi [4] have reported increased values of in submicron nMOSFETs. As the channel length decreases, only the HD simulation results show gradual increases of and in Fig. 7(a) Both models yield increased correlation factor in Fig. 7(b) and it suggests that this would mitigate the impact of larger and on the ....

A. A. Abidi, "High-frequency noise measurements on FET's with small dimensions," IEEE Trans. Electron Devices, vol. 33, p. 1801, Nov. 1986.

....respectively, is the gatesource voltage, and is the threshold voltage. Equation (4) is valid for both short and long channel regimes of operation. however, is around 2 3 for long channel transistors while it may be between two and three in the short channel region due to hot electron effects [8]. In addition to these sources, the contribution of the effective series resistance of the inductor caused by ohmic losses in the metal and substrate is given by (5) where is the equivalent parallel resistance at the frequency of oscillation. B. The Effect of a Tail Capacitor The foregoing ....

A. A. Abidi, "High-frequency noise measurements of FET's with small dimensions," IEEE Trans. Electron Devices, vol. ED-33, pp. 1801--1805, Nov. 1986.

....C bias Gnd Vdd L i p1 2 i p2 2 i n1 2 i n2 2 i tail 2 r s v rs 2 0 7803 4766 8 10.00 (c) 1998 IEEE (7) is valid for both short and long channel regimes of operation. However g is around 2 3 for long channel mode while it is between 2 and 3 for the short channel region. [2] In addition to these sources, the contribution of the effective series resistance of the inductor, r s , caused by ohmic losses in the metal and substrate is given by (8) where is the equivalent parallel resistance. Note that the noise in vicinity of w 0 of the tail current source has a ....

A. A. Abidi, "High-frequency noise measurements of FET's with small dimensions," IEEE Trans. Elec. Devices, vol. ED33,

....generally dictate CMOS process evolution, these benefits may be expected to improve as scaling continues. III. BROADBAND DEVICE NOISE It has been known for quite some time that short channel MOSFETs in saturation exhibit considerably more broadband RF noise than predicted by long channel theory [3]. This observation has led to speculation that unacceptably poor noise performance might accompany scaling to smaller dimensions. The thermally noisy channel charge produces effects that are modeled by a drain and gate current noise generator. These currents are partially correlated with each ....

A. Abidi, "High-Frequency Noise Measurements on FET's with Small Dimensions," IEEE Transactions on Electron Devices, Nov. 1986.

....in standard MOS models, with the exception of the Philips MOS9 model [13] In addition, one should be careful to consider the effect of back gate epitaxial noise [14] which can result in an apparent increase in the coefficient of drain noise. Finally, may also increase due to hot electron effects [15]. To evaluate the magnitude of the epitaxial resistance noise, we can model the epitaxial layer as a resistance in series with the bulk terminal of the device [16] There is a noise voltage associated with this resistance, which, together with the drain current noise of the device, produces a ....

....the measured result of 2.4 dB. Without the induced gate noise model, the simulated noise figure drops to 1.8 dB. The conclusion is that only a modest increase in is required to reconcile simulations with measurements once the induced gate noise is included. In light of results reported in [12] and [15], it is plausible that this increase results from hot electron effects. In addition, this agrees well with independent noise measurements made on individual test devices [18] Fig. 5. Quadrature generation with the Miller capacitance. B. Mixer and LO Drivers The LNA output is ac coupled to the ....

A. A. Abidi, "High-frequency noise measurements on FET's with small dimensions," IEEE Trans. Electron Devices, vol. ED-33, pp. 1801--1805, Nov. 1986.

....the mobility, is the gate oxide capacitance per unit area, and are the channel width and length of the device, respectively, and is the gate voltage overdrive. The coefficient is 2 3 for long channel devices in the saturation region and typically two to three times greater for shortchannel devices [18]. Equation (17) is valid in both shortand long channel regimes as long as an appropriate value for is used. A. Single Ended CMOS Ring Oscillators We start with a single ended CMOS ring oscillator with equal length NMOS and PMOS transistors. Assuming that the maximum total channel noise from NMOS ....

A. A. Abidi, "High-frequency noise measurements of FET's with small dimensions," IEEE Trans. Electron Devices, vol. ED-33, pp. 1801--1805, Nov. 1986.

....figure reported to date for a CMOS amplifier operating above 1GHz. Introduction The demand for portable, inexpensive GPS systems motivates the investigation of low noise front end techniques in standard CMOS processes. It has been shown that sub micron CMOS devices exhibit excess thermal noise [1][2] Nonetheless, recent work has demonstrated the viability of CMOS low noise amplifiers (LNA s) at frequencies as high as 900MHz [3] In this paper, we present an LNA suitable for GPS applications which has been fabricated through MOSIS in a 0.6m CMOS process. LNA Design The primary goal in ....

....of bias. Experimental studies have shown that g may be as high as 2 to 3 for short channel devices operating in saturation. This value generally increases with increasing drain bias. The increased value of g over the long channel value of 2 3 is evidently due to hot electrons in the channel [1]. In terms of g, the output noise current due to the channel thermal noise is The noise figure is given by the total output noise power divided by the noise power at the output due to the input source. Including the contributions of inductor loss and gate resistance, Lg Vbias M1 Ls M2 ....

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A.A. Abidi, "High-frequency noise measurements on FET's with small dimensions," IEEE Trans. on Electron Devices, vol. ED-33, no. 11, pp. 1801-1805, November 1986.

....2 : 1 transformer of Fig. 18(a) may prove useful. A simple transformer based oscillator, e.g. that in Fig. 18(b) can also yield the self resonance frequency and loss of the structure. B. Noise The thermal noise of submicrometer MOS transistors does not satisfy the long channel approximation [17]. Depending on the bias conditions, the excess noise factor may be quite higher than 2 3, an effect not included in most SPICE models. More accurate models for the channel noise are described in [18] But two other thermal noise mechanisms merit characterization as well. Illustrated in Fig. 19, ....

A. A. Abidi, "High-frequency noise measurements on FET's with small dimensions," IEEE Trans. Electron Devices, vol. ED-33, pp. 1801--1805, Nov. 1986.

....obstructions such as buildings and trees. Hence, a good amplifier is critical for enabling robust performance in obstructed environments. One possible threat to low noise operation is the welldocumented, but relatively unappreciated, excess thermal noise exhibited by submicron CMOS devices [1] [4] This noise is believed to arise from hot electron effects in the presence of high electric fields. Despite this excess noise, recent work has demonstrated the viability of CMOS low noise amplifiers (LNA s) at frequencies around 900 MHz [5] 7] As we will show, CMOS is also a suitable ....

....satisfies the inequality (5) The value of 2 3 holds when the device is saturated, and the value of one is valid when the drain source voltage is zero. For short channel devices, however, does not satisfy (5) In fact, is much greater than 2 3 for short channel devices operating in saturation [1] [4] For 0.7 m channel lengths, may be as high as two to three, depending on bias conditions [1] This excess noise may be attributed to the presence of hot electrons in the channel. The high electric fields in submicron MOS devices cause the electron temperature, to exceed the lattice ....

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A. A. Abidi, "High-frequency noise measurements on FET's with small dimensions," IEEE Trans. Electron Devices, vol. ED-33, pp. 1801--1805, Nov. 1986.

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A. Abidi, "High-Frequency Noise Measurements on FET's with Small Dimensions," IEEE Transactions on Electron Devices, vol. ED-33, no. 11, pp. 1801-1805, November 1986.

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