P. Berman, A. B. Kahng, D. Vidhani, H. Wang and A. Zelikovsky, "Optimal Phase Conflict Removal for Layout of Dark Field Alternating Phase Shifting Masks", Proc. ACM Intl. Symp. on Physical Design, Apr. 1999, pp. 121-126.  Home/Search   Document Details and Download   Summary   Related Articles   Check

....than some minimum spacing, and rules that enforce the distance between any 0 phase shifter and any 180 phase shifter to be greater than some minimum spacing. Type 1 rules can be checked via standard DRC techniques and tools. The Type 2 rules have been recently addressed by academic researchers [10, 11]. Examples include rules to avoid odd cycles in the (planar) conflict graph. Efficient and scalable algorithms for automatic conflict resolution appear to be available, and necessary linkages with compaction enabled layout synthesis (cf. 12] appear very tractable. As for Type 3 rules, an ....

P. BERMAN, A.B. KAHNG, D. VIDHANI, H. WANG, and A. ZELIKOVSKY, Optimal Phase Conflict Removal for Layout of Dark Field Alternating Phase Shifting Masks, Proc. ACM International Symposium on Physical Design, April 1999, pp. 121-126.

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P. Berman, A. B. Kahng, D. Vidhani, H. Wang and A. Zelikovsky, "Optimal Phase Conflict Removal for Layout of Dark Field Alternating Phase Shifting Masks", Proc. ACM Intl. Symp. on Physical Design, Apr. 1999, pp. 121-126.

....of the c:PSM structures and the Si based structures, but such a new paradigm would require substantial retraining of layout people and modification of legacy automated layout algorithms. A neighboring paper in this session [1] describes many of these issues in significant detail, as does reference [2]. As an example of the type of layout rules that must be imposed, consider the perpendicular gate problem (Fig.1. Conventional lithography leads to a familiar design rule that there is some minimum space between the poly of one gate and the active (source drain) region of the other. ....

P. Berman, A. B. Kahng, D. Vidhani, H. Wang and A. Zelikovsky, "Optimal Phase Conflict Removal for Layout of Dark Field Alternating Phase Shifting Masks," Proc. ACM Intl. Symp. on Physical Design, April 1999, pp. 121-126.

.... algorithms for layout modification and phase assignment of bright field alternating phaseshifting masks (AltPSM) 25] The problem of layout modification for phase assignability reduces to the problem of making a certain layoutderived graph bipartite (i.e. 2 colorable) Previous work [3] solves bipartization optimally for the dark field alternating PSM regime. Only one degree of freedom is allowed (and relevant) for such a bipartization: edge deletion, which corresponds to increasing the spacing between features in order to remove phase conflict. Unfortunately, dark field PSM is ....

....layers, due to limitations of negative photoresists. Poly and metal layers are actually created using positive photoresists and bright field masks. In this paper, we define a new graph bipartization formulation that pertains to the more technologically relevant bright field regime. Previous work [3] does not apply to this regime. This formulation allows two degrees of freedom for layout perturbation: i) increasing the spacing between features, and (ii) increasing the width of critical features. Each of these corresponds to node deletion in a new layout derived graph that we define, called ....

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P. Berman, A. B. Kahng, D. Vidhani, H. Wang and A. Zelikovsky, "Optimal Phase Conflict Removal for Layout of Dark Field Alternating Phase Shifting Masks", IEEE Trans. on CAD 19(2) (2000), pp. 175-187.

....testcase. The bottom five rows contain the numbers of unresolved conflict edges (i.e. the numbers of pairs of polygons within distance B with the same phase, which must be resolved by perturbing the layout with a compactor) and runtimes for phase assignment algorithms suggested in [19] 12] [2], a method based on approximation algorithm by Goemans Williamson[7] and the present paper. All runtimes are in seconds for a 300 MHz Sun Ultra 10 workstation with 128MB RAM. of all features after compacting exactly once in each of the x and y directions. 7.2 Computational Experience With the ....

P. Berman, A. B. Kahng, D. Vidhani, H. Wang and A. Zelikovsky, "Optimal Phase Conflict Removal for Layout of Dark Field Alternating Phase Shifting Masks", Proc. ACM/IEEE Intl. Symp. on Physical Design, 1999, to appear.

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P. Berman, A. B. Kahng, D. Vidhani, H. Wang and A. Zelikovsky, "Optimal Phase Conflict Removal for Layout of Dark Field Alternating Phase Shifting Masks", Proc. ACM/IEEE Intl. Symp. on Physical Design, 1999, to appear.

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