| P.Gray, R. Meyer, "Future directions in silicon ICs for RF personal communications", Proc. CICC, 1995. |
....as discussed in the next section. since January 1997 with IMEC, Leuven, Belgium y research associate of the Belgian National Fund of Scientific Research 2 Design example Avery important goal in the development of ASICs for RF transceivers is to reach higher and higher levels of integration [1, 2, 3]. Especially for the baseband processing, large mixed signal circuits with complex functionalitycan be integrated on the same chip. In this paper we will concentrate on the highlevel design of the baseband signal processing circuits for a direct conversion receiver [2] as shown in figure 1. In ....
....LNA BPF A D A D LPF LPF FIR FIR mixed signal baseband processing Fig. 1: Baseband signal processing in a direct conversion receiver. There is a current trend to perform more and more baseband functions in the digital domain, resulting in better performance, programmability and robustness [1]. These benefits come at the cost of a higher power (and area) consumption of the digital part and the ADC. In direct conversion receivers, the baseband signal at the output of the quadrature mixer includes several adjacentchannels which can contain large blocking signals. These signals can be up ....
P.Gray, R. Meyer, "Future directions in silicon ICs for RF personal communications", Proc. CICC, 1995.
....for any distance. We assume the following model for receiver power at any relay node: A fixed receiver power of 80 mW is consumed at each node, with 20 mW increase for each additional node from which transmission is received. This model can be easily modified according to actual receiver design [4, 15]. With the above assumptions, the relay region is obtained by solving the following two equations simultaneously: d 4 ij d 4 rj d 4 ir c=t and d 2 ij = d 2 ir d 2 rj Gamma 2d ir d rj cos where is the angle between position vectors r r i and r r j . These equations are ....
P. Gray and R. Meyer, "Future Directions in Silicon ICs for RF Personal Communications," Proceedings of CICC 95, pp. 83-90, May 1995.
....linked to the trend towards full integration. An ever further level of integration renders significant space, cost and power reductions. Many different techniques to obtain a higher degree of integration for receivers, transmitters and synthesizers have been presented over the past years [1] 2] [3]. Parallel to the trend to further integration, there is the trend to the integration of RF circuitry in CMOS technologies. The mainstream use for CMOS technologies is the integration of digital circuitry. The use of these CMOS technologies for high performance analog circuits yields however, if ....
....NPN devices. Although some research has been performed in the past on the design of RF in CMOS technologies [4] it is only since a few years that real attention has been given to its possibilities [5] 6] Today several research groups at universities and in industry are researching this topic [2 3], 7] 9] 33 34] 37] As bipolar devices are inherently better than CMOS devices, RF CMOS is by some seen as a possibility for only low performance systems, with reduced specification (like ISM) 10] 8] or that the CMOS processes need adaptations, like substrate etching under inductors ....
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P.R. Gray and R.G. Meyer, "Future Directions in Silicon ICs for RF Personal Communications," Proc. CICC, May 1995.
....smaller, cheaper, and more reliable. This trend is expected to continue at an even greater pace over the next decade [44] Wireless systems such as GSM, DECT, and IS 54 are already widespread and current research is directed towards reducing power dissipation, size, and cost in the implementation [4, 28]. During the last years, the wireless communications market has grown tremendously in both North America and Europe. The GSM and DECT standards have created a huge market in Europe and the FCCs recent allocation of the 1.8 2.2GHz US frequency band for PCS (Personal Communication System) is ....
.... of handset cost is becoming increasingly important [38] Because of this, current trends in wireless research move from SMD (Surface Mounted Devices) design with discrete components towards single chip (or at least dual chip) full integration with only a minimum of external discrete elements [4, 20, 28]. Such integrated circuits operating in the 400MHz 2.5GHz frequency band are commonly referred to as RF ICs [1] Besides an expectation of low cost high volume manufacturing, other causes to this development are desires of higher reliability, lower power consumption, and greater versatility. The ....
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P. R. Gray and R. G. Meyer. Future Directions in Silicon ICs for RF Personal Communications. In Proc. of IEEE Custom Integrated Circuits Conference (CICC), pages 91 -- 94, May 1995.
....having different geometric and process parameters. This model is scalable with inductor geometry, allowing designers to predict and optimize the quality factor. INTRODUCTION Interest in monolithic spiral inductors has surged with recent growing demand for Si based RF communication circuits [1]. Although promising experimental results [2] 3] have been reported, basic understanding of the performance limitations and procedures for optimizing the quality factor, Q, are lacking. A scalable physical model that can accurately predict the behavior of inductors with different structural ....
P. R. Gray and R. G. Meyer, "Future directions in silicon ICs for RF personal communications," Proceedings of the IEEE 1995 Custom Integrated Circuits Conference, pp. 83-90, May 1995.
....transceivers have focussed on increased integration in a low cost technology (e.g. CMOS) as well as adaptability to multiple RF communication standards. This requires research into new architectures and circuit techniques that enable both integration and programmability in RF transceivers [1], 2] Increased integration by eliminating external components such as SAW filters will reduce transceiver cost, reduce the power dissipation required to drive high frequency signals off chip and shrink the form factor. However, traditional 1.2 Research Goals 2 superheterodyne receivers which ....
....10 antenna, which self mixes as a DC offset. The carrier feedthrough and DC offset represent a large additive error source in the presence of a small desired low frequency signal at baseband. As a result, these offsets and 1 f noise must be removed either adaptively or with circuit techniques [1]. 2.2.3 Low IF Receiver The low IF receiver shown in Fig. 2.7 mixes to a low enough IF that on chip bandpass filtering can be used to perform channel selection. This architecture eliminates the problems of DC offset and 1 f noise associated with direct conversion receivers while maintaining the ....
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Paul Gray, and Robert Meyer. "Future Directions in Silicon ICs for RF Personal Communications," Proceedings, 1995 Custom Integrated Circuits Conference, pp. 83-90, May 1995.
....IMEC VSDM Kapeldreef 75 B 3001 Leuven, Belgium Abstract Traditionally, the digital implementation of modems is restricted to parts operating at baseband frequency. At higher frequencies, roughly 30 MHz and beyond, analog technologies such as SAW filters provide a better power performance figure [1]. In this paper, we show how this barrier can be broken by trading programmability for speed. Using a digital multirate filter structure that offers combined interpolation and frequency shifting, an area and power efficient digital upconversion is achieved. INTRODUCTION In recent years, digital ....
P. Gray, R. Meyer, "Future Directions in Silicon ICs for RF Personal Communications", Proc. IEEE Custom Integr. Circuit Conf.of the 1995, pp. 83--90, 1995.
....thesis was : Simulation of a digital modulation for a DECT transmitter using Delta Sigma converter. The thesis work was based on a architecture proposed by Riley and Copeland [8] 9] in the Journal of Solid State Circuit. Simulation work was performed on delta sigma converter at that 9 cf. [4] for more detail on advantage and drawbacks of these techniques 10 The direct conversion is also called zero IF 11 high Q analog filtering was obtained for a 4 kHz signal T. STICHELBOUT: USING THE OVERSAMPLING TECHNIQUE IN WIRELESS TRANSCEIVERS 3 Power Amplifier BPF BPF BPF 90 90 Low Noise ....
P.R.Gray and R. G. Meyer, "Future directions in silicon ics for rf personal communication," Proceedings IEEE Custom Integrated Circuit Conference, pp. 91--95, may 1995. Challenge in achieving high integration, for transceiver in the band 800 MHz-2.5 GHz.
....lower power transceiver operation are examined as well as some proposed directions for future integrated transceiver research and development. I. Introduction Explosive growth in the portable communications market has led to consumer demand for low cost, small form factor, low power transceivers [1]. In addition, developers of new wireless applications are looking to provide consumers with both the convenience of added connectivity and the benefit of additional services provided by a transceiver able to operate off of multiple RF standards. The VLSI capabilities of CMOS make this technology ....
P. Gray and R. Meyer, "Future Directions of Silicon ICs for RF Personal Communications," Custom Integrated Circuits Conference, pp.
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