P. Degond, C. Schmeiser, Kinetic boundary layers and fluid-kinetic coupling in semiconductors, Transport Theory Statist. Phys. 28 (1999), no. 1, 31--55. Home/Search Document Details and Download
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A Smooth Transition Model Between Kinetic And Diffusion Equations - Degond, Jin Self-citation (Degond) (Correct)
....to use a domain decomposition method that couples the di#usion equation with the transport equation. Domain decomposition methods matching kinetic and hydrodynamic or di#usion models have received a lot of attention in the past 15 years. Some of the methods have been proposed in [3] 7] [14], 15] 18] 19] 25] 26] 28] 29] 33] 34] 37] Typically a domain decomposition is done by an iteration procedure at each time step in which the di#usion and the transport equation are solved alternately until convergence of the successive approximation is reached, or through an ....
P. Degond, and C. Schmeiser, Kinetic boundary layers and fluid-kinetic coupling in semiconductors, Transport Theory Statist. Phys., 28 (1999), pp. 31--55.
Diffusion Limit For Non Homogeneous And.. - Degond, Goudon, Poupaud (2000) (1 citation) Self-citation (Degond) (Correct)
....effects by G. Allaire G. Bal [1] G. Allaire Y. Capdeboscq [2] and T. Goudon F. Poupaud [15] For applications to semi conductors and analysis of boundary layers we refer to N. Ben Abdallah P. Degond S G enieys [6] F. Poupaud [20] N. Ben Abdallah P. Degond [5] P. Degond C. Schmeiser [9]. Our aim in this paper is to deal with the linear operator (2) allowing space dependence and without requiring a detailed balance relation. Let us now set up some notations and assumptions before we give the statement of our main results. 2 Preliminaries and main result As mentioned above, our ....
Degond P. and Schmeiser C., Kinetic boundary layers and fluid-kinetic coupling in semiconductors, Transport Theory Statist. Phys., 28, no. 1, 31-55 (1999).
Macroscopic Models for Semiconductor Heterostructures - Degond, Schmeiser (1999) (2 citations) Self-citation (Degond Schmeiser) (Correct)
....which links its jump at the interface to the common value of its fluxes on each side of the interface. The coefficient in this combination is similar to the extrapolation length originating from the presence of kinetic boundary layers [2] 11] and introduced in the semiconductor context in [7], 27] It is obtained as the equilibrium limit of two half space stationary kinetic problems connected with the interface conditions, which will later be referred to as a two sided Milne problem , in reference to the Milne problem of kinetic theory [2] In section 5, it is shown that the ....
....2 Omega Theta IR j 2 R (x; t)g ; 2. 19) where Omega is the device domain in x space and R (x; t) is the numerical range of the energy function k 2 B (x; k; t) Therefore, boundary conditions must be prescribed for x 2 Omega or 2 R (x; t) For x 2 Omega Gamma we refer to [7] where this question is addressed in detail. For 2 R (x; t) it is enough to note that the diffusion constant D (see (2.18) vanishes, because the density of states vanishes. Thus, the parabolic problem (2.17) degenerates (see [3] for details) and no boundary condition needs to be ....
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P. DEGOND, C. SCHMEISER: "Kinetic boundary layers and fluid-kinetic coupling in semiconductors", submitted.
A Domain Decomposition Analysis For A Two-Scale Linear.. - Golse, Jin, Levermore (2002) (Correct)
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P. Degond, C. Schmeiser, Kinetic boundary layers and fluid-kinetic coupling in semiconductors, Transport Theory Statist. Phys. 28 (1999), no. 1, 31--55.
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