M. C. Gaidis, H. G. LeDuc, M. Bin, D. Miller, J. A. Stern, and J. Zmuidzinas, "Characterization of low--noise quasi--optical SIS mixers for the submillimeter band," IEEE Trans. Microwave Theory Tech., vol. MTT--44, pp. 1130--1139, 1996.  Home/Search   Document Not in Database   Summary   Related Articles   Check

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M. C. Gaidis, H. G. LeDuc, M. Bin, D. Miller, J. A. Stern, and J. Zmuidzinas, "Characterization of low--noise quasi--optical SIS mixers for the submillimeter band," IEEE Trans. Microwave Theory Tech., vol. MTT--44, pp. 1130--1139, 1996.

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M. Gaidis, H. G. LeDuc, M. Bin, D. Miller, J. A. Stern and J. Zmuidzinas, "Characterization of low noise quasi-optical SIS mixers for the Submillimeter Band", IEEE transactions on Microwave Theory and Techniques, Vol. 44, No. 7, pp. 1130-1139, July 1996.

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M. Gaidis, H. LeDuc, M. Bin, D. Miller, J. Stern, and J. Zmuidzinas, "Characterization of low-noise quasi-optical SIS mixers for the submillimeter band," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 1130--1139, 1996.

....polyethylene lens and a silicon hyperhemispherical lens with antireflection (AR) coating of alumina loaded epoxy [9] The quartz pressure window is AR coated with Teflon. For the dual polarization mixer, we used our existing single polarization mixer block, described in detail by Gaidis et al. [10], with some minor modifications, such as a second SMA connector to bring out two IF outputs for the two polarizations. Fig. 5 presents a detailed view of the mixer block and associated circuitry. Fig. 5(a) shows a disassembled block with the mixer chip at the center. Fig. 5(b) shows the hardware ....

....devices are fabricated on a 0.25 mm thick 50 mm diameter silicon wafer, which is then diced into 2.0 2.0 mm individual chips. The high resistivity ( 1000 cm) silicon support disk is 2.5 cm in diameter and 1.0 mm thick. The silicon hyperhemisphere is similar to the one described by Gaidis et al. [10]. 1 Zitex, Norton Company, Wane, NJ. Janos Technology Inc. Townshend, VT. Litetak 3761 UV curing adhesive, Loctite Corporation, Hartford, CT. DC bias supply and readout leads enter from the multipin connector on the right hand sdie, and the mixer IF outputs, after being combined by the ....

M. C. Gaidis, H. G. LeDuc, M. Bin, D. Miller, J. A. Stern, and J. Zmuidzinas, "Characterization of low-noise quasi-optical SIS mixers for the submillimeter band," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 1130--1139, July 1996.

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M. C. Gaidis, H. G. LeDuc, M. Bin, D. Miller, J. A. Stern, and J. Zmuidzinas, "Characterization of low-- noise quasi--optical SIS mixers for the submillimeter band," IEEE Trans. Microwave Theory Tech. MTT--44, pp. 1130--1139, 1996.

....several different materials. II. NbTiN Ground Plane, Nb Wiring and a Nb Al O x Nb Junctions Since we did not know the material properties (mechanical and electrical) of the NbTiN superconducting films, we first fabricated double slot antenna devices with an existing mask designed for niobium [1, 2]. The devices had a NbTiN ground plane, Nb Al O x Nb junction, and niobium wiring. We have made direct detection Fourier Transformer Spectrometer (FTS) measurements and hot cold heterodyne measurements near the peak of the FTS response, at 639 GHz. The frequency response measured with the FTS ....

M. Gaidis, H. G. LeDuc, M. Bin, D. Miller, J. A. Stern and J. Zmuidzinas, "Characterization of low noise quasi-optical SIS mixers for the Submillimeter Band", IEEE transactions on Microwave Theory and Techniques, Vol. 44, No. 7, pp. 1130-1139, July 1996.

....epoxy [5] 11] The quartz pressure window is AR coated with Teflon. Fig. 5. Simplified receiver layout. The elements within the dewar are mounted on a 4.2 K cold plate. For the dual polarization mixer, we used our existing single polarization mixer block, described in detail by Gaidis et al. [12], with some minor modifications, such as another SMA connector to bring out two IF outputs for the two polarizations. Fig. 6 presents a detailed view of the mixer block and the associated circuitry. Fig. 6(a) shows a disassembled block with the mixer chip at the center. Fig. 6(b) shows the ....

....are fabricated on a 0.25 mm thick, 50 mm diameter silicon wafer, which is then diced into 2.0 x 2.0 mm individual chips. The high resistivity ( 1000##0 m) silicon support disk is 2.5 cm in diameter and 1.0 mm thick. The silicon hyperhemisphere is similar to the one described by Gaidis et al. [12]. The silicon disk is clamped in the mixer block by a printed circuit board, which itself is held in place by metal clamps and screws as shown in Fig. 6(a) The circuit board is 0.64 mm thick TMM6 temperature stable microwave laminate from Rogers corporation [14] with room temperature dielectric ....

M. C. Gaidis, H. G. LeDuc, M. Bin, D. Miller, J. A. Stern, and J. Zmuidzinas, "Characterization of low-noise quasi-optical SIS mixers for the submillimeter band," IEEE Trans. Microwave Theory Tech., vol. MTT-44, no. 7, pp. 1130-1139, July 1996.

....to that described by Kominami et al. 2] II. METHOD OF MOMENTS ANALYSIS As usual, the substrate lens is treated as a semi infinite dielectric slab. This is a very good approximation since, in practice, reflections at the lens surface can be largely eliminated by using an antireflection coating [3]. We consider the case in which the horizontal slots are excited symmetrically (Fig. 1) The field distribution in the slots can be intutively obtained from symmetry considerations. In particular, the field distribution in the vertical slots must be antisymmetric and, therefore, the voltage at the ....

M. C. Gaidis, H. G. LeDuc, M. Bin, D. Miller, J. A. Stern, and J. Zmuidzinas, "Characterization of low-noise quasioptical SIS mixers for the submillimeter band," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 1130--1139, July 1996.

....high density polyethylene lens at 4.2 K, and several layers of porous Teflon on the 77 K radiation shield. A 25 m mylar film serves as the vacuum window. This receiver setup is nearly identical to that used for prior measurements and is known to give excellent receiver performance up to 1 THz [1] [8]. III. MIXERS WITH NBTIN GROUND PLANE AND WIRE, NB ALN NBTIN JUNCTIONS The NbTiN film used for the ground plane is deposited on unheated Si and has T c 15 K, ae(T c ) 80 Omega cm and L 230 nm. The mixer layout was designed using these as nominal values. The wiring layer NbTiN film is ....

....layers of new infrared filters, which have since been replaced. IV. HIGH CURRENT DENSITY NB ALN NB JUNCTIONS The high current density mixers were fabricated using an existing design for low current density Nb AlO x Nb SIS mixers which gave good performance and whose behavior was well understood [8]. However, in place of the AlO x barriers, AlN barriers are formed by plasma nitridation following the Al deposition. The junctions are square, with a nominal area of A = 1:7 m 2 . The mixers used in our study have J c 30 kAcm Gamma2 , yielding junctions with RNA = 5:6 Omega m 2 and ....

M. C. Gaidis, H. G. LeDuc, M. Bin, D. Miller, J. A. Stern, and J. Zmuidzinas, "Characterization of low-noise quasi-optical SIS mixers for the submillimeter band," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 1130--1139, 1996.

....30 20 10 0 Spectrum (a.u. 4000 3000 2000 1000 0 Frequency (GHz) 4 3 2 1 600 400 200 0 200 400 600 Scanning mirror position (mm) Fig. 7. Heterodyne FTS interferogram (a) and spectrum (b) showing two sidebands. The device is an all Nb SIS mixer optimized for the 750 GHz band. 750 GHz band [9] . Since the IF amplifier is centered at 1.5 GHz with a bandwidth of 500 MHz, a resolution of 114 MHz was used in order to separate the two sidebands. The LO frequency for this test is 742 GHz. The FTS interferogram (Fig. 7a) shows the high frequency oscillations characteristic of the 742 GHz LO ....

M. C. Gaidis, H. G. LeDuc, M. Bin, D. Miller, J. A. Stern, and J. Zmuidzinas, "Characterization of low-noise quasi-optical SIS mixers for the submillimeter band," IEEE Trans. Microwave Theory Tech., vol. 44, no. 7, pp. 1130-1139, 1996

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