Muller and Kamins, Device Electronics for Integrated Circuits, John Wiley & Sons, 1986.  Home/Search   Document Not in Database   Summary   Related Articles   Check

....is the 9 first level, the capacitance can then be neglected and the line can be modeled as a series of a resistance and an inductance. This is exactly the condition in which the model reported in the following paragraphs has been developed. Using indeed a substrate doped p type with NA = cm 3 [27], for example, its resistivity will be as in equation (4) qNA p ) 1 6.5 # cm (4) and as a consequence the relaxation frequency computed using the expression in (1) will be as in (5) f r = 1.23 GHz (5) Figure 3 shows the frequency spectrum of the noise signals traveling on the ground and ....

R. Muller and T.I.Kamins. Device Electronics for Integrated Circuits. John Wiley and Sons, Inc., 1977.

....sub threshold currents turn out to be the main contributions, which implies that they dominate the current behaviour in today s deep sub micron technologies. Our work is centered on the study of these sub threshold currents. For an NMOS device, the quiescent current due to subthreshold conduction [11] follows this simplified relationship: W , t, I, b,t, or Cox exp[ t ) where Co is the gate capacitance per unit area, W is the channel width, L is the channel length and Vtt, is the subthreshold volge. These fo pameters e affected by their tolerance, therefore, we need to know their ....

R.S. Muller and T.I. Kamins, "Device Electronics for Integrated Circuits", Second Edition. Wiley&Sons, 1986.

....CL is the capacitance that is switched, and Vaa and V are the supply and transistor threshold voltages, respectively, and is the velocity saturation index that assumes a value close to 2 for long channel transistors. For shorter channel lengths however, is close to 1 due to velocity saturation [12]. For simplicity, we will assume that =1 in the following analysis. Let the unscaled voltages be denoted by Vaav, Vwv and the scaled voltages be denoted by Vaas, Vw s . From equation(1) in order to achieve the same delay after voltage scaling, the following equation must be satisfied: 2) ....

R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits. John Wiley and Sons, 2 ed., 1986.

....APPENDIX A. GP0 MOSFET Models Here we describe the MOSFET large and small signal models used in our method. The model, which we refer to as GP0, is essentially the standard long channel square law model described in, 3] and [41] This model can be inadequate for short channel transistors [70], 91] in which case better models can be developed that still allow optimization via geometric programming (see the Appendix, Section B) 1) Large Signal Models: Correct operation of the op amp requires all transistors to be in saturation. For an NMOS transistor this means (47) When the NMOS ....

R. S. Muller and T. H. Kamins, Device Electronics for Integrated Circuits, 2nd ed. New York: Wiley, 1986.

....comments. 38 A MOSFET models In this section we describe the MOSFET large and small signal models used in our method. The model is very similar to the standard long channel square law model described in, e.g. 83, 84] This model can be inadequate for short channel transistors (see, e.g. [85, 86]) in which case better models can be developed that still allow optimization via geometric programming; see x7.5. PMOS NMOS D D G G S S I D I D Figure 11: Transistor symbols A.1 Large signal models Correct operation of the op amp requires all transistors to be in saturation. For an NMOS ....

R. S. Muller and T. H. Kamins. Device Electronics for Integrated Circuits. John Wiley & Sons, 2nd. edition, 1986.

....designs incorporate overhead voltage margins to guarantee proper operation under worst case conditions. This is due to the circuit delay s strong dependence on process parameters and temperature as shown by the equations for device transconductance, and threshold voltage, V TH , below. [33] (2 2) 2 3) Device transconductance strongly depends on oxide thickness, C ,whichcanvaryby 12 between process runs . Mobility and threshold voltage both have strong dependence on temperature which can significantly degrade circuit speed. Performance dependence on process and temperature ....

R.S. Muller, et. al., Device electronics for integrated circuits, John Wiley and Sons, 1986.

....readership. Keywords Molecular electronics, nanoelectronics, quantum dots, quantum effect devices, resonant tunneling, single electron transistors. I. INTRODUCTION For the past 40 years, electronic computers have grown more powerful as their basic subunit, the transistor, has shrunk [1]. However, the laws of quantum mechanics and the limitations of fabrication techniques may soon prevent further reduction in the size of today s conventional fieldeffect transistors (FET s) Many investigators in the field of next generation electronics project that during the next 10 to 15 years, ....

R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits. New York: Wiley, 1986.

.... adhesion to most dielectrics and can drift very quickly through them under electric bias to cause metal to metal shorts and to reach the underlying Si substrate where they can diffuse very rapidly through Si interstitial sites and form deep level acceptors that can degrade device performance [24]. This is then followed by Cu deposition (usually by electroplating) Next, the unwanted Cu and barrier layers outside the trenches are removed using chemical mechanical polishing (CMP) 25] Finally, a layer of silicon nitride is deposited which passivates the top surface of the Cu metal in the ....

R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2nd ed. New York: Wiley, 1986, pp. 1--56.

....shifts, only the threshold voltage of the NMOS transistor in the second inverter in the chain was shifted. The amount of the threshold voltage shift in a damaged device could grow larger than the values simulated here if the gate leakage current caused by hot electron injection stays longer [20]. Tables 10 and 11 show the simulation results. The last three columns in Tables 10 and 11 show the delay ratios. In this subsection, the delay ratio is the ratio between the propagation delay of a faulty circuit with threshold voltage shifts and that of a fault free circuit. The delay measured in ....

Muller, R.S., and T.I. Kamins, Device Electronics for Integrated Circuits , Second Edition, John Wiley & Sons, Inc., 1986.

....Fig. 4 shows the values of the breakdown and full depletion voltage versus fluence. The theoretical formula of V a break (avalanche breakdown) for a one sided ideal step junction has the form: V a break = ffl Si ffl 0 E 2 1 2qN eff ; where E 1 is the critical value of the electric field [15]. Obviously, this formula does not hold for such a complex structure as a microstrip detector, but the main feature, that V break is inversely proportional to N eff , is still valid. Fig. 4 shows that the breakdown voltage decreases fluence, while the full depletion voltage exhibits the opposite ....

R. S. Muller T. I. Kamins, Device electronics for integrated circuits, John Wiley and Sons, 1977.

....above or below the n diffusion p substrate junction or diffusing from neighbouring photodiodes, will be swept away from the n diffusion region by the junction field, or be bypassed to the power supply. III. DEVICE FABRICATION The photodiode array was fabricated using a bipolar process in silicon [16]. The Fabry Perot etalons were added in a post process module. The post process module, which was used to fabricate the 16 etalons, each with a different thickness, requires further explanation. The formation of the Fabry Perot etalon starts with the deposition of a 20nm Al layer after completion ....

R. S. Muller, T. I. Kamis, "Device electronics for integrated circuits," John Wiley & Sons, 1986.

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Muller and Kamins, Device Electronics for Integrated Circuits, John Wiley & Sons, 1986.

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R. Muller and T. Kamins, Device Electronics for Integrated Circuits. New York, NY, USA: John Wiley and Sons, second edition ed., 1986.

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R. S. Muller and T. I. Kamins. Device electronics for integrated circuits. John Wiley & Sons, 1986.

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R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits. New York: Wiley, 1986.

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R.S. Muller and T.I. Kamins, Device Electronics for Integrated Circuits, New York: John Wiley and Sons, Inc., 1986.

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R. S. Muller and T. I. Kamins, Device electronics for integrated circuits. Wiley, New Yo r k 2 ed., 1986.

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R. S. Muller and T. I. Kamins, Device electronics for integrated circuits. Wiley, New Yo r k 2 ed., 1986.

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R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2nd ed. New York: Wiley, 1986, ch. 10.

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R. S. Muller and T. I. Kamins, Device electronics for integrated circuits. Wiley, New Yo r k 2 ed., 1986.

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R.S. Muller and T.I. Kamins. Device Electronics for Integrated Circuits. Wiley, 1986.

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R. S. Muller and T. I. Kamis, Device Electronics for Integrated Circuits, New York: Wiley, 1986.

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R. S. Muller and T. H. Kamins. Device Electronics for Integrated Circuits. John Wiley & Sons, 2nd. edition, 1986.

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R. Muller and T. Kamins, Device Electronics for Integrated Circuits, 2nd ed., John Wiley and Sons, 1986.

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Muller, R.S., and T.I. Kamins, Device Electronics for Integrated Circuits, Second Edition, John Wiley & Sons, Inc., 1986.

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