S.Sze., Physics of Semiconductor Devices. John Wiley and Sons, 1981.  Home/Search   Document Not in Database   Summary   Related Articles   Check

....affecting the highest derivatives is widely met in mathematical models of physical or chemical processes. In particular, as Poisson s equation for the electrostatic potential it is a constituent of the so called drift diffusion model which describes the behaviour of semiconductor devices (see [25], for example) The model is used extensively in semiconductor device modelling (see [22] for instance) Under suitable continuity and compatibility conditions on the data, a unique solution u(P ) of the problem (1) exists (see [11] for details) Furthermore, for 1 problem (1) is singularly ....

S. Sze, Physics of semiconductor devices, Wiley, New York, 1969.

....After the annealing, the off current stays about the same, but the subthreshold slope is improved to 65mV decade. Another effect of the annealing is that the on current is increased by almost 15 times. From the subthreshold slope, we can analyze the quality of the oxide silicon interface [6]: Dit = 60mV (Cit Cd) Cox (1) where Dit is the interface trap density, Cd is the depletion capacitance, Cox is the gate oxide capacitance, and Cit is the capacitance caused by the trapped charges at the oxide silicon interface. Cit = q Dit (2) where q is the single electron charge and is ....

S.Sze, "Physics of Semiconductor Devices," John Wiley and Sons,Inc.NewYork,NY,1981,pp.251.

....collection e#ciency (CCE) for photon interactions immediately below the oxide layer between the strips due to a distortion of the electric field. Positive charges are accumulated in the interface between oxide and silicon, and these attract electrons in the silicon resulting in a space charge [100]. The e#ect from this space charge of electrons is that the potential increases between the electrodes. In the resulting absence of a field gradient that drift charges towards the electrodes, they have to di#use out from these regions leading to charge losses and reduced pulse 0.14 0.80 2.01 ....

S. Sze. Physics of semiconductor devices. New York: Wiley, 1981.

....silicon due to high level impurity doping. W bem and W bcol are the limit of the neutral base from emitter and collector at zero biasing and n ie (T) represents the effective doping profile of intrinsic carriers given by E i ie Gbgn e T n T n = 3) Using the Einstein relation [3] and the mobility temperature variation, the mean diffusion constant D nb N E nb nb T T D T D 0 0 ) 4) where E N is the temperature exponent. The temperature variation of the Gummel number can be written as E G W W T T N dx T x N ....

S.M. Sze, "Physics of Semiconductor Devices", 2nd edition, 1981 John Wiley & Sons, Inc.

....With a nonlinear 1D Poisson solver we have first computed the value of n s at equilibrium as a function of E pin (Fig. 2A) in order to obtain the value of E pin corresponding to the measured n s (E pin 0. 855 eV) Such a value is well within the range of values for E pin found in the literature [4]. The corresponding electric field at the surface is E = 0.772 MV cm 1 . We have then computed the sheet electron density in the 2DEG as a function of the gate voltage for different values of the etching depth (Fig. 2B) an etching depth of 1 nm corresponds to a shift of about 70 mV for the ....

S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981) pp. 270--279.

....it is sufficient to model it as a single additional layer. Usually the doping profile of the p well is known. For the calculation of the average resistivity one has to take into account that the carrier mobility depends on doping concentration due to additional scattering at ionised impurities [9]. Simulations show that using several layers to describe the changing doping concentration leads to the same result. It can be seen in Figure 1 that the electric field near the injection point has a simple 1 r relationship which is similar to a field of a single layer halfspace with r r ....

S. M. Sze. Physics of Semiconductor Devices. John Wiley & Sons, New York, 2 edition, 1981.

....forward bias the p n junction momentarily, it is not likely that the significant minority carrier injection will occur since the voltage drop below 0 is only a half of or 300 mV. Furthermore, the amount of charge injected is too small (50 fC) to sustain a large current that can initiate a latch up [36]. IV. MULTIPHASE CLOCK GENERATION AND RECOVERY The previous section described parallel combinations of transmitters and receivers that achieve high aggregate bitrate while operating at low clock frequency. Timing to select each transmitter and receiver is controlled by the clocks with equally ....

S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.

....lengths below the space charge region of the pn junction. n is the minority carrier concentration in the region below the space charge region, relative to the equilibrium concentration n that would be obtained in an infinite bulk layer. The transport of these carriers is described by the equation [6]: 1) With the electron generation rate, being the diffusion coefficient of the electrons in the doped layer, is the electrical field along the axis (i.e. the direction perpendicular to the surface) is the electrical field along the axis (i.e. the direction parallel to the surface ....

....field in the region below the space charge region is negligible, 1) can be approached by (3) In the simulations discussed below, all parameters are taken as follows: is about cm at the GaAs bandgap ( nm) the mobility of electrons in doped Si is 1500 cm V s, cm s, s, and equals 3. 11 mm [6]. When a light source at nm can be used, increases to cm . We used diffusion equation (3) to calculate numerically the minority carrier profile below the space charge region of the PN junctions of an SML detector. For a periodicity of the detector fingers of 2 m, we will compare the analytical ....

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S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.

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S.Sze., Physics of Semiconductor Devices. John Wiley and Sons, 1981.

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S. M. Sze, Physics of Semiconductor Devices, Wiley, 1981.

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S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.

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Sze S.M. Physics of Semiconductor Devices, Wiley, New York, (1981)

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S. M. Sze, Physics of Semiconductor Devices. Wiley, New York, 2 ed., 1981.

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S.Sze., Physics of Semiconductor Devices. John Wiley and Sons, 1981.

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S. M. Sze, Physics of Semiconductor Devices. Wiley, New York, 2 ed., 1981.

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S. M. Sze, Physics of semiconductor devices, 2 ed. New York: John Wiley & Sons, 1981.

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S. M. Sze, Physics of Semiconductor Devices. Wiley, New York, 2 nd ed., 1981.

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S. M. Sze, Physics of Semiconductor Devices. Wiley, New York, 2 ed., 1981.

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S.Sze., Physics of Semiconductor Devices. John Wiley and Sons, 1981.

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S. M. Sze, "Physics of Semiconductor Devices," J. Wiley, NewYork, 1981, p. 261.

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S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.

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Sze, S.: Physics of Semiconductor Devices. John Wiley & Sons, Inc., 1981.

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S. M. Sze, Physics of Semiconductor Devices, Second Edition, John Wiley and Sons, 1981. 183

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. S.M. Sze, Physics of Semiconductor Devices (Wiley, New York 1981)

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S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.

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