| D. Sylvester and C. Hu, "Analytical Modeling and Characterization of Deep-Submicrometer Interconnect," Proc. IEEE, vol. 89, pp. 634--664, May 2001. |
....As a practical rule, empirical laws are used based on (7) on the material and processes used by each foundry and on current flowing along the line. Another parameter that influences the global line resistance is skin e#ect, which increases the e#ective resistance values if frequency is high [11]. At DC, indeed, the charge carriers have an even distribution throughout the section of the wire. As the frequency increases, a rotational magnetic field around the conductor induces a current in the metal that opposes the original current. This oppositely directed current forces the original ....
D.M. Sylvester. Analytical modeling and characterization of deep submicron interconnect. Phd. thesis dissertation, University of California, Berkeley, 1999.
....Buses Alberto Garc a Ortiz, Lukusa D. Kabulepa, Manfred Glesner Darmstadt University of Technology, Institute of Microelectronic Systems agarcia,kabulepa,glesner mes.tu darmstadt.de Abstract Because of the increasing importance of cross coupled capacitances in deep submicron technologies [1], it is of great interest to extend the existing high level power estimation techniques by considering the spatial correlation between adjacent lines. This work addresses the modeling and estimation of power dissipation in on chip buses based on the statistical properties of data sequences. Using ....
D. Sylvester and C. Hu. Analytical modeling and characterization of deep-submicrometer interconnect. Proc. of the IEEE, 89(5):634--664, May 2001.
No context found.
D. Sylvester and C. Hu, "Analytical Modeling and Characterization of Deep-Submicrometer Interconnect," Proc. IEEE, vol. 89, pp. 634--664, May 2001.
No context found.
D. Sylvester and C. Hu, "Analytical modeling and characterization of deep-submicrometer interconnect," Proc. IEEE, vol. 89, no. 5, pp. 634-- 664, May 2001.
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