J. S. Hamel, "Separating the influences of neutral base recombination and avalanche breakdown on base current reduction in SiGe HBT's," IEEE Trans. Elec. Dev., vol. 44, pp. 901--903, 1997.

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Parameter Extraction for the Bipolar Transistor Model .. - Paasschens.. (2001)   (1 citation)  (Correct)

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J. S. Hamel, "Separating the influences of neutral base recombination and avalanche breakdown on base current reduction in SiGe HBT's," IEEE Trans. Elec. Dev., vol. 44, pp. 901--903, 1997.

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