H. Boeve, C. Bruynseraede, J. Das, K. Dessein, G. Borghs, J. De Boeck, R. C. Sousa, L. V. Melo, and P. P. Freitas. Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures. IEEE Transactions on Magnetics, 35(5):2820--2825, Sept. 1999.  Home/Search   Document Not in Database   Summary   Related Articles   Check

....can enable a different file system API. However, underneath the hood of AS 400, conventional roles of memory acting as the cache for disk content still apply, and disks are still the persistent storage medium for files [17] One form of persistent RAM under development is Magnetic RAM (MRAM) [3]. An ongoing project on MRAM enabled storage, HeRMES, also takes advantage of persistent RAM technologies [25] HeRMES uses MRAM primarily to store the file metadata to reduce a large component of existing disk traffic, and also to buffer writes to lengthen the time frame for committing modified ....

Boeve H, Bruynseraede C, Das J, Dessein K, Borghs G, De Boeck J, Sousa R, Melo L, Freitas P. Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures. IEEE Transactions on Magnetics 35(5), pp. 2820-2825, 1999.

....memory hierarchy. Section 6 describes related work, and Section 7 summarizes our conclusions and describes issues for future study. 2 MRAM Memory Cells and Banks Magnetoresitive random access memory (MRAM) is a memory technology that uses the magnetic tunnel junction (MTJ) to store information [31, 4]. The potential for MRAM has improved steadily due to advances in magnetic materials. MRAM uses the magnetization orientation of a thin ferromagnetic material to store information, and a bit can be detected by sampling the difference in electrical resistance between the two polarized states of the ....

H. Boeve, C. Bruynseraede, J. Das, K. Dessein, G. Borghs, and J. D. Boeck. Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory MRAM architectures. IEEE Transactions on Magnetics, 35:2820--2825, Sep 1999.

....in large units and take great pains to ensure that the file system s image on disk remains internally consistent. If the file system includes any non volatile memory (NVRAM) there is usually a limited amount used as a temporary storage area to facilitate staging data to disk. Magnetic RAM (MRAM) [4] is a new memory technology, currently in development, with the speed, density, and cost of DRAM and the non volatility of disk. We are investigating the use of MRAM in the HeRMES (Highperformance, Reliable, MRAM Enabled Storage) file system to dramatically improve file system performance by ....

H. Boeve, C. Bruynseraede, J. Das, K. Dessein, G. Borghs, J. De Boeck, R. Sousa, L. Melo, and P. Freitas, "Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures," IEEE Trans. on Magnetics 35(5), pp. 2820--2825, 1999.

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H. Boeve, C. Bruynseraede, J. Das, K. Dessein, G. Borghs, J. De Boeck, R. C. Sousa, L. V. Melo, and P. P. Freitas. Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures. IEEE Transactions on Magnetics, 35(5):2820--2825, Sept. 1999.

No context found.

H. Boeve, C. Bruynseraede, J. Das, K. Dessein, G. Borghs, J. De Boeck, R. C. Sousa, L. V. Melo, and P. P. Freitas. Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures. IEEE Transactions on Magnetics, 35(5):2820--2825, Sept. 1999.

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