L. B. Rothman. "Properties of thin film polyimide films," Journal of the Electrochemical Society: Solid State Sci. Technology, vol.127, no.10; p.2216-20, Oct. 1980.

 Home/Search   Document Not in Database   Summary   Related Articles  

This paper is cited in the following contexts:
The Impact of Low Cost High Density Substrates on RF.. - Cottet Grzyb Trster (2000)   (Correct)

....with a mask offset as function of the panel radius. Dielectric deposition Ideal dielectric deposition would provide 100 planarisation from one layer to the other but in common thin film technologies this is never achieved. The degree of planarisation (DOP) was therefore first introduced in [3] to quantify this effect and extended for multilayer build ups in [4] We have cross sectioned LAP test substrates to measure the planarisation of BCB and PBO on copper conductors. A DOP of about 55 was observed for both materials (Figure 2a and b) The overall thickness variation of spin coated ....

L. B. Rothman. "Properties of thin film polyimide films," Journal of the Electrochemical Society: Solid State Sci. Technology, vol.127, no.10; p.2216-20, Oct. 1980.

Online articles have much greater impact   More about CiteSeer.IST   Add search form to your site   Submit documents   Feedback  

CiteSeer.IST - Copyright Penn State and NEC