| S. Mendis, S.E. Kemeny, and E.R. Fossum. CMOS active pixel image sensor. IEEE Transactions on Electron Devices, 41(3):452--453, March 1994. |
....to be power consuming because of the large voltage swing (about 10V) needed to drive them. While CMOS imaging devices are now showing performances on a par with low end CCD sensors [12] they perform way better on the power consuming side. The most famous ones are the APS (Active Pixel Sensors) [11]. Furthermore, they provide new capabilities such as random access to the pixels and focal plane signal processing. The latter point is of particular interest. CMOS technology is not only cheaper to produce than CCD technology, but it also allows to embed A D conversion and or computing ....
S. Mendis, S.E. Kemeny, and E.R. Fossum. CMOS active pixel image sensor. IEEE Transactions on Electron Devices, 41(3):452--453, March 1994.
.... of depleted regions, which conditions the proportion of photogenerated charges collected, may become too shallow, thus requiring less obvious charge collection techniques [2] Taking advantage of the new deal for image capture purposes, specific CMOS readout circuit techniques have been developed [3,4] that associate a photodiode with a few MOS transistors in each pixel for faithful off array signal transmission. With submicronic transistors, they imply a minor degradation of pixel size or fill factor. The resulting CMOS imagers have recently matched the standards of mainstream CCD imagers [2] ....
S.Mendis, S.E.Kemeny, and E.R.Fossum, "CMOS active pixel image sensor", IEEE Trans. on Electron Devices, 41(3):452-453, 1994.
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