A. Lefebvre, C. Herbeaux, C. Bouillet, and J. Di Persio, Phil. Mag. Lett. 63, 23 (1991). Misfit Dislocations in Epitaxial Heterostructures 249  Home/Search   Document Not in Database   Summary   Related Articles

....layer and substrate, and its width is usually about 0.1 to 0.2 mm (Fig. 1c) On TEM plan view micrographs 3D MD networks look like dense irregular networks (Fig. 1d) The formation of such networks has been attributed to a MD multiplication near the interface through modified FrankRead mechanism [17, 18]. For the SiGe Si system, such evolution of dislocation patterns is valid for alloy compositions up to 20 at Ge. However, the density of threading dislocations in the layer and dislocations in the substrate as well as the depth of dislocation propagation into the substrate depends on the alloy ....

....InGaAs GaAs [1, 2] heterostructures. The major features of such networks are as follows: i) multilevel MD network at the interface; ii) misfit dislocation pile ups spreading deeply into the substrate; iii) low density of threading dislocations in the layer. Two modified Frank Read mechanisms [17, 18] have been proposed to account for such dislocation patterns. In both models, the angle dislocation tips turning down into the substrate are treated as sources for multiplication. Both models account for the formation of dislocation pile ups in the substrate with due regard for the symmetrical ....

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A. Lefebvre, C. Herbeaux, C. Bouillet, and J. Di Persio, Phil. Mag. Lett. 63, 23 (1991). Misfit Dislocations in Epitaxial Heterostructures 249

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