V.I. Vdovin, M.G. Milvidskii, and T.G. Yugova, Solid State Phenom. 32/33, 345 (1993).  Home/Search   Document Not in Database   Summary   Related Articles

....alloys. The attention was paid to the effect of plastic deformation of the substrate during epitaxial growth. Appropriate dislocation patterns (hereafter called three dimensional misfit dislocation (MD) networks) were observed, for example, in InGaAs GaAs [1, 2] SiGe Si [3, 4] and SiGe Ge [5] heterostructures. The formation of such 3D MD networks was attributed to the MD multiplication and or dislocation interaction. Some previously proposed mechanisms of MD generation were criticized or reviewed. In particular, more sophisticated calculations have shown that high minimum mismatch ....

....in the layer and dislocations in the substrate as well as the depth of dislocation propagation into the substrate depends on the alloy composition and layer thickness. Practically the same tendency in dislocation pattern evolution was found in the GeSi Ge system for similar Si alloy composition [5, 12]. 2.2 GaAlAsSb GaSb In LPE Ga 1x Al x As y Sb 1y GaSb heterostructures grown under the same conditions (T gr = 510 C, h =2mm) we observed different stages of dislocation pattern formation for different alloy compositions. Plan view micrographs of MD networks are shown in Fig. 2 for ....

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V.I. Vdovin, M.G. Milvidskii, and T.G. Yugova, Solid State Phenom. 32/33, 345 (1993).

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