D.K. Schroder, "Semiconductor Material and Device Characterization" (Wiley, NewYork, 1990). Home/Search Document Not in Database Summary Related Articles Check |
This paper is cited in the following contexts:
Minority-Carrier Lifetime Degradation in Silicon.. - Ciszek, Wang.. (1997) (Correct)
....in both of their charge states, and 0. The E v 0.1 eV peak is also close in energy to one for Fe B. But the associated concentration is too high to represent residual B in the high purity FZ process and the capture cross section is too low relative to the earlier reported value of 4x10 2 [6]. Annealing Experiments To confirm that the lower lifetimes in co doped samples are indeed due to Fe Ga pair defects, we performed two types of low temperature (50 250C) annealing experiments for durations of 10 min to 2 h, depending on the temperature used. The first annealing study consisted ....
D. K. Schroder, Semiconductor Material and Device Characterization, Wiley-interscience, New York, NY. (1990).
Analysis of trapping and detrapping in.. - Rogalla, Eich.. (1997) (Correct)
....with increasing bias voltage. The dependence of the time constant of the slow exponential decay as a function of bias can be seen in figure 2. If we interpret the slow components as a detrapping from defects the decrease of can be explained by field enhanced emission (Poole Frenkel effect [8]) The observed dependence of on the resistivity ae is in contradiction to the circuit model proposed by ref. 7] where is given by = ae L w (1) where L and w denotes the thickness of detector and space charge region. Additional we have shown in a previous paper [9] that the space charge ....
.... look on the amplitude of the slow component we observe a decrease with bias and resistivity (figure 3) From temperature dependent measurements at a constant bias voltage assuming a 1 Deutsche Vitrom GmbH, Pinneberg, Germany 2 similar theory as for PICTS (Photo Induced Current Spectroscopy) [8] the detrapping time is given by = exp(E c Gamma E T =kT ) fl n oe n T 2 (2) with an activation energy E T , capture cross section oe n and coefficient fl n , we have determined two electron traps. The activation energies are E T1 = 0.352 Sigma 0.025 eV and E T2 = 0.51 Sigma 0.07 eV ....
D.K. Schroder, Semiconductor material and device characterization, (John Wiley & Sons, 1990)
A Model of Photoelectric Phenomena in MOS Structures at Low.. - Przewlocki (1999) (Correct)
No context found.
D.K. Schroder, "Semiconductor Material and Device Characterization" (Wiley, NewYork, 1990).
Wafer-Mounted Sensor Arrays for Plasma Etch Processes - Freed (2001) (Correct)
No context found.
Dieter K. Schroder. Semiconductor Material and Device Characterization, pages 1--13. Wiley Interscience, 1990.
Online articles have much greater impact More about CiteSeer.IST Add search form to your site Submit documents Feedback
CiteSeer.IST - Copyright Penn State and NEC