H. Grabert, M.H. Devoret, Single Charge Tunneling, Coulomb Blockade Phenomena in Nanostructures, Plenum, New York, 1992.  Home/Search   Document Not in Database   Summary   Related Articles   Check

....also be included in computing thermal expectation values. The measured island charge is then no longer strictly an integer multiple of the elementary charge; it is rather the statistical average of the island charge over accessible configurations. In modeling tunneling events the orthodox theory [15 18] of single electron tunneling was used, and co tunneling[21 22,30 31] was neglected. The dynamics of the F 1 2 q q T C 1 q q v T q E electrostatic W sources = 18 system are governed by the following equation which gives the tunneling rate of an electron in a tunnel ....

....circuit (only grounding through tunnel junctions connects the circuit to the environment) then DF ij =F i F j for all the transitions and the tunneling rate depends only on the free energy difference of the initial and final configurations. The tunneling rates will be used for a master equation[15 17,32] model. The alternative approach would be the Monte Carlo method[41 42] The master equation method is preferable here since the system is near equilibrium so the number of states (charge configurations) required for modeling is not large. For the master equation model, the accessible charge ....

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Hermann Grabert and Michel H. Devoret, Single Charge Tunneling, Coulomb Blockade Phenomena in Nanostructures (Plenum Press, New York, 1992).

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H. Grabert, M.H. Devoret, Single Charge Tunneling, Coulomb Blockade Phenomena in Nanostructures, Plenum, New York, 1992.

....of today s major technologies and devices. Nanoscale sized devices [4] may become an extremely attractive option for the development of integrated circuits with dimensions and performance limits well beyond the ultimate roadmap projections. Among these devices, single electron transistors [7], 3] present as attractive features an extremely low power consumption, reduced dimensions, excellent current control and low noise behavior. Besides that,the recent demonstration of silicon based singleelectron transistors operating at room temperature [8] indicates that the transition from ....

....transistor. Presently the smallest dimension of the island in these devices ranges between 5 and 100 nm. In devices such as the single electron transistor (SET) the individual flow of electrons to and from the island can be controlled by a third electrode capacitively coupled to the island [7]. Besides this distinctive feature, other aspects concerning these devices should also be considered: They can be operated with bias supply voltages at mV (milliVolt) levels [7] their charge sensitivity is two orders of magnitude smaller than that of a FET transistor [3] 9] SET transistors ....

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H. Grabert and M. Devoret, Eds., Single Charge Tunneling, Coulomb Blockade Phenomena in Nanostructures, vol.294 of NATO ASI Series B:Physics. Plenum Press, New York, 1992.

....network, SET transistor, periodic neuron, neural device, I. Introduction The ever increasing demand for larger and more complex signal processing systems has led to an augmenting interest for new technologies to realize these systems in. Single Electron Tunneling transistors (SET transistors) [1], 2] have a number of attractive properties which make them excellent candidates for implementing compact and complex signal processing systems [3] SET transistors are above all very small. With the current state of the art fabrication technology, an integration density of 10 11 SET ....

....by positive values. The weight is continuously updated, hence some leakage from or to the capacitor is permitted. D.2 Perturb weight The function of this circuit is to change the charge of the weight capacitor by stepsize. The sign depends on the status of the sign control. An electron pump [1] is not feasible, because each pump has to be tuned precisely in order to function at all. Each weight would need such a pump, which makes this solution impractical even for small networks. Learning Single Electron Tunneling Neural Nets 183 An alternative is to use a SET transistor or a FET as a ....

M.H. Devoret and H. Grabert, Eds., Single Charge Tunneling, Coulomb Blockade Phenomena in Nanostructures, vol. 294 of NATO ASI Series B:Physics, Plenum, New York, 1991.

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