Kinetics with Topography Simulation Wolfgang Pyka, Student Member, Ieee,...  Home/Search
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Abstract: For wafer sizes in state-of-the-art semiconductor manufacturing ranging up to 300 mm, the uniformity of processes across the wafer becomes a very important issue. We present a fully three-dimensional model for the feature scale simulation of continuum transport and reaction determined high-pressure chemical vapor deposition processes suitable for the investigation of such nonuniformities. The newly developed three-dimensional approach combines topography simulation, meshing, and finite element... (Update)
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BibTeX entry: (Update)
@misc{ topography-ieee,
author = "Kinetics With Topography",
title = "IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS,
VOL. 18, NO. 12, DECEMBER 1999 1741 Three-Dimensional Simulation of HPCVD---Linking
Continuum Transport and Reaction",
url = "citeseer.ist.psu.edu/746486.html" }
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www.ieee.org/products/online/journal/tcad/accepted/radi-feb99/
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