Tyrone E. Benson, Leonard I. Kamlet, Pete Klimecky, Fred L. Terry, Jr.  Home/Search
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Abstract: Accurate film thickness monitors are important for the development of real-time feedback control of dry etch processes and are very useful for run-to-run process control and process diagnostics. Technologically important films such as polycrystalline Si, which can have process-dependent refractive indices and/or surface roughness, pose significant challenges for low-cost, high-speed film thickness measurement systems. We have used spectroscopic reflectometry (SR) to make accurate in-situ,... (Update)
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BibTeX entry: (Update)
@misc{ benson-situ,
author = "Tyrone E. Benson and Leonard I. Kamlet and Pete Klimecky and Fred L. Terry
and Jr.",
title = "In-situ Spectroscopic Reflectometry for Polycrystalline Silicon Thin Film
Etch Rate Determination During Reactive Ion Etching",
url = "citeseer.ist.psu.edu/655751.html" }
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