DEFECT INDUCED DIFFUSION MECHANISMS IN ION IMPLANTED QUANTUM WELL STRUCTURES
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by J. M. Fatah, I. Karla, P. Harrison, T. Stirner, W. E. Hagston, J. H. C. Hogg, Hu Rx
http://www.ee.leeds.ac.uk/staff/ph/preprints/37.ps
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Abstract:
The present paper describes a method for utilizing X-ray diffraction measurements to determine the diffusion constant D associated with a specific diffusion mechanism. In particular, for Cd 1\Gammax Mn x Te quantum well structures a value of D 0:5 A 2
Citations
| 1 | The stopping and range of ions in matter 1 (Pergamon – Ziegler, Bierrack, et al. - 1985 |
| 1 | Hagston submitted to Phys. Rev – Fatah, Harrison, et al. |
