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  C-V and Gate Tunneling Current Characterization of Ultra-Thin Gate Oxide (1999) [2 citations — 0 self]

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by Chang-hoon Choi, Jung-suk Goo, Tae-young Oh, Zhiping Yu, Robert W. Dutton, Amr Bayoumi, Min Cao, Paul V, E Voorde, Dieter Vook
MOS (tox=1.3-1.8 nm),” IEEE Symposium on VLSI Technology Digest of Technical Papers, pages 63 – 64
http://www-tcad.stanford.edu/tcad/pubs/device/vlsi99-choi.pdf
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Abstract:

Direct tunneling of ultra-thin gate oxides results in exponential increases in gate leakage current [1]. Moreover, the loss of inversion charge due to the quantization of carriers is now significant. Hence, more physically accurate models are urgently needed. In this paper,

Citations

8 private communication – Yu - 1995